BSC0901NSATMA1 N-Channel MOSFET with 30V drain-source voltage rating and 149A continuous drain current (at case temperature). Low on-resistance of 1.9mOhm at 10V gate drive in a compact PG-TDSON-8 surface mount package.
Mfr Part #:

BSC0901NSATMA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel MOSFET with 30V drain-source voltage rating and 149A continuous drain current (at case temperature). Low on-resistance of 1.9mOhm at 10V gate drive in a compact PG-TDSON-8 surface mount package.
✓ Total Stock: 51,020 pcs
$ Price Range: $0.50 - $1.89

BSC0901NSATMA1 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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51,020 pcs
51020 pcs On Request 1 On Request On Request On Request On Request On Request

BSC0901NSATMA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

BSC0901NSATMA1 Description

Short technical summary and product information.

This N-channel MOSFET from Infineon's OptiMOS series is designed for high-performance power conversion applications. It features a maximum drain-source voltage of 30V and a continuous drain current of 149A at case temperature 25°C. The device has a very low on-resistance of 1.9mOhm at 10V gate drive, minimizing conduction losses. It is avalanche tested and offers superior thermal resistance.

 

The MOSFET is housed in a PG-TDSON-8 (SuperSO8) surface mount package, ideal for compact designs. It is RoHS compliant and halogen-free per IEC61249-2-21. Key electrical characteristics include a typical gate charge of 44nC and input capacitance of 2800pF. The device is suitable for synchronous buck converters and other high-current switching applications.

BSC0901NSATMA1 Quick Information

Product Type: MOSFET
Series: OptiMOS
Canonical Name: Infineon Technologies BSC0901NSATMA1 N-Channel MOSFET, 30V, 149A, PG-TDSON-8
Subcategory: N-Channel MOSFET

BSC0901NSATMA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

BSC0901NSATMA1 Estimated Pricing

Qty Low High
1+ $1.89 $1.89
10+ $1.20 $1.20
100+ $0.76 $0.76
500+ $0.61 $0.61
1,000+ $0.54 $0.54
2,500+ $0.52 $0.52
5,000+ $0.50 $0.50

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSC0901NSATMA1 Features

  • 30V drain-source voltage rating.
  • 149A continuous drain current at Tc=25°C.
  • Ultra-low on-resistance of 1.9mOhm.
  • Optimized for high-performance buck converters.
  • RoHS compliant and halogen-free.

BSC0901NSATMA1 Applications

  • Used in high-current synchronous buck converters.
  • Ideal for power management in computing systems.
  • Suitable for high-frequency switching applications.

BSC0901NSATMA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage (Vds) of the BSC0901NSATMA1?

The maximum drain-source voltage is 30V.

What is the package type of the BSC0901NSATMA1?

The package is PG-TDSON-8 (SuperSO8, 8-PowerTDFN) with surface mount mounting.

What is the operating junction temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the BSC0901NSATMA1 RoHS compliant?

Yes, it is RoHS3 compliant and halogen-free according to IEC61249-2-21.

What is the typical on-resistance?

The maximum on-resistance is 1.9mOhm at 30A and 10V gate drive.

What is the continuous drain current rating?

The continuous drain current is 149A at Tc=25°C with 10V gate drive, and 28A at TA=25°C.

What is the gate charge?

The typical gate charge is 44nC at 10V gate-source voltage.

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