| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
Infineon BSC080N03MSGATMA1 is an N-Channel enhancement mode Power MOSFET designed for high efficiency power conversion. It features a drain-source voltage of 30V and a continuous drain current of 53A at Tc=25°C with 10V gate drive. The device achieves a low on-resistance of 8mOhm maximum at Vgs=10V and Id=30A, and 10.2mOhm maximum at Vgs=4.5V, making it suitable for low voltage applications.\n\nThe MOSFET is optimized for 5V gate drive applications, particularly in notebook, VGA, and point-of-load converters. It offers low gate charge and excellent figure of merit for high frequency switching. The device is 100% avalanche tested, with single pulse avalanche energy of 15mJ.\n\nPackaged in the PG-TDSON-8 (8-PowerTDFN) surface mount package, it provides superior thermal resistance of 3.6 K/W junction-to-case bottom. The operating junction temperature range is -55°C to 150°C. The product is RoHS compliant, halogen-free, and has Pb-free plating.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.21 | $1.21 |
| 642+ | $0.47 | $0.47 |
| 5,000+ | $0.29 | $0.29 |
| 10,000+ | $0.28 | $0.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage rating is 30V minimum.
The package is 8-PowerTDFN (PG-TDSON-8) surface mount.
The operating junction temperature range is -55°C to 150°C.
Yes, the device is RoHS compliant with Pb-free plating.
The continuous drain current is 53A at Tc=25°C with Vgs=10V, and 33A at Tc=100°C.
The maximum on-resistance is 8mOhm at Vgs=10V and Id=30A, and 10.2mOhm at Vgs=4.5V.
The gate threshold voltage is 1V minimum, 1.5V typical, 2V maximum at Id=250µA.