BSC080N03LSGATMA1 N-Channel Power MOSFET from Infineon's OptiMOS 3 series. Rated for 30V drain-source breakdown voltage, 14A (Ta) / 53A (Tc) continuous drain current, and 8mΩ on-resistance at 10V.
Mfr Part #:

BSC080N03LSGATMA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel Power MOSFET from Infineon's OptiMOS 3 series. Rated for 30V drain-source breakdown voltage, 14A (Ta) / 53A (Tc) continuous drain current, and 8mΩ on-resistance at 10V.
✓ Total Stock: 656 pcs
$ Price Range: $0.28 - $0.30

BSC080N03LSGATMA1 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
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656 pcs
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BSC080N03LSGATMA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

BSC080N03LSGATMA1 Description

Short technical summary and product information.

The BSC080N03SGATMA1 is an N-Channel Power MOSFET from Infineon Technologies, part of the OptiMOS 3 series. It features a drain-source breakdown voltage of 30V (minimum) and a continuous drain current of 14A at ambient temperature (Ta) and 53A at case temperature (Tc). The on-resistance is typically 8mΩ maximum at 10V gate drive and 30A drain current, and 12mΩ at 4.5V. The gate threshold voltage is 2.2V maximum, making it suitable for logic-level drive.

 

This MOSFET is optimized for DC/DC converters and switched-mode power supplies (SMPS). It offers low gate charge (21nC) and input capacitance (1700pF) for efficient switching. The device is avalanche rated with a single pulse avalanche energy of 15mJ, ensuring ruggedness in inductive switching applications. Thermal resistance is 3.6 K/W junction-to-case (bottom) and 50 K/W junction-to-ambient with a 6 cm² cooling area on PCB.

 

The component is surface mounted in an 8-PowerTDFN package (PG-TDSON-8-5 supplier package). It is RoHS3 compliant, Pb-free, and halogen-free according to IEC61249-2-21. Operating temperature range is -55°C to 150°C junction.

BSC080N03LSGATMA1 Quick Information

Product Type: Power MOSFET
Series: OptiMOS 3
Canonical Name: Infineon BSC080N03SGATMA1 N-Channel MOSFET, 30V, 14A/53A, PG-TDSON-8
Subcategory: Single MOSFET

BSC080N03LSGATMA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

BSC080N03LSGATMA1 Estimated Pricing

Qty Low High
5,000+ $0.30 $0.30
10,000+ $0.28 $0.28
25,000+ $0.28 $0.28

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSC080N03LSGATMA1 Features

  • N-Channel logic level Power MOSFET.
  • 30V drain-source breakdown voltage.
  • 53A continuous drain current at Tc.
  • 8mΩ on-resistance at 10V gate drive.
  • Avalanche rated for ruggedness.

BSC080N03LSGATMA1 Applications

  • Ideal for DC/DC converter designs.
  • Suitable for SMPS applications.
  • Used in power management circuits.
  • Optimized for high efficiency switching.

BSC080N03LSGATMA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage?

30V minimum.

What package is this MOSFET available in?

8-PowerTDFN (PG-TDSON-8-5).

What is the operating temperature range?

-55°C to 150°C (junction).

Is this component RoHS compliant?

Yes, RoHS3 compliant and Pb-free plating.

What is the continuous drain current?

14A at 25°C ambient, 53A at 25°C case.

What is the on-resistance?

8mΩ maximum at 10V, 30A; 12mΩ at 4.5V, 30A.

What is the gate threshold voltage?

Maximum 2.2V at 250µA.

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