| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
31,000 pcs
|
31000 pcs | On Request | 1 | On Request | On Request | 06+ | On Request | On Request | |
|
1,780 pcs
|
1780 pcs | On Request | 1 | On Request | On Request | 1104+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The BSC079N03SG is an N-Channel enhancement mode power MOSFET from Infineon's OptiMOS 2 family. It is designed for fast switching applications such as SMPS and notebook DC/DC converters. The device features a drain-source breakdown voltage of 30V and a continuous drain current of 40A at case temperature 25°C. The on-resistance is typically 6.6 mΩ and maximum 7.9 mΩ at Vgs=10V, Id=40A. The gate charge is 17 nC at Vgs=5V, enabling efficient switching. The MOSFET is avalanche rated with single pulse avalanche energy of 120 mJ. It is housed in a surface-mount 8-PowerTDFN package (PG-TDSON-8-1) with excellent thermal resistance of 2.1 K/W junction-to-case. The operating temperature range is -55°C to 150°C. The device is RoHS compliant and Pb-free.
| Qty | Low | High |
|---|---|---|
| 567+ | $0.53 | $0.53 |
| 5,000+ | $0.59 | $0.59 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
8-PowerTDFN (PG-TDSON-8-1).
-55°C to 150°C (junction).
Yes, it is RoHS3 compliant and Pb-free.
40A at Tc=25°C, 14.6A at Ta=25°C.
Maximum 2V at Id=30µA.
7.9 mΩ max at Vgs=10V, Id=40A; 11.6 mΩ max at Vgs=4.5V.