| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
22,551 pcs
|
22551 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Gate Charge | |
| Halogen Free | |
| Mounting Type | |
| Operating Temperature | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Tape & Reel |
The BSC077N12NS3 G is an N-Channel power MOSFET manufactured by Infineon Technologies. It is designed for high-efficiency power conversion applications requiring a 120V drain-source breakdown voltage and a continuous drain current rating of 77A. The device features a low on-resistance of 7.7mOhm, which minimizes conduction losses in switching circuits.
The MOSFET is housed in a PG-TDSON-8 surface-mount package, enabling compact PCB layouts and automated assembly. It operates over a junction temperature range of -55°C to 175°C, suitable for demanding thermal environments. The gate-source voltage is rated at 20V, and the total gate charge is 55nC, allowing for efficient gate drive design.
This component is commonly used in DC-DC converters, motor drives, and power management systems where high efficiency and reliability are critical. The surface-mount package supports high-density designs in industrial and automotive applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) is 120V.
The continuous drain current (Id) is 77A.
The maximum on-resistance (Rds(on)) is 7.7mOhm.
It uses the PG-TDSON-8 surface-mount package.
The operating temperature range is -55°C to 175°C.