| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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7,541 pcs
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7541 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
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| Technology |
The Infineon Technologies BSC072N025SG is an N-Channel MOSFET belonging to the OptiMOS™ series. It features a drain-source voltage (Vds) of 25V and a continuous drain current (Id) of 15A at 25°C ambient temperature, and 40A at case temperature.
This MOSFET has a low on-resistance (Rds On) of 7.2mOhm at a drain current of 40A and gate-source voltage of 10V. The gate drive voltage ranges from 4.5V to 10V. It utilizes MOSFET (Metal Oxide) technology and is designed for surface mounting.
The component is housed in a PG-TDSON-8-1 package, suitable for applications requiring efficient power switching and management. Its specifications make it suitable for power electronics designs where high current handling and low on-resistance are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vds) is 25 V.
The continuous drain current is 15 A at ambient temperature (Ta) and 40 A at case temperature (Tc=25°C).
The maximum on-resistance is 7.2 mOhm at a drain current of 40 A and gate-source voltage of 10 V.
The package is PG-TDSON-8-1, surface mount.
The gate-source voltage range is 4.5 V to 10 V.
It is an N-Channel MOSFET using Metal Oxide technology.
It belongs to the Infineon OptiMOS series.