| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
73,845 pcs
|
73845 pcs | On Request | 1 | On Request | On Request | 1901 | On Request | On Request | |
|
45,000 pcs
|
45000 pcs | On Request | 1 | On Request | On Request | 1712+ | On Request | On Request | |
|
3,500 pcs
|
3500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,810 pcs
|
2810 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| SVHC Present |
The Infineon Technologies BSC070N10NS5 is an OptiMOSTM5 series N-channel power MOSFET. It is optimized for high-performance switched-mode power supplies (SMPS), such as synchronous rectification.
Key electrical specifications include a drain-source voltage (VDS) of 100V, a maximum on-resistance (RDS(on)) of 7.0 mΩ at a gate-source voltage (VGS) of 10V and 80A drain current, and a continuous drain current (ID) of 80A at 25°C case temperature.
This MOSFET is 100% avalanche tested and features superior thermal resistance. It is qualified according to JEDEC standards for target applications. The device is Pb-free lead plating and RoHS compliant, as well as halogen-free according to IEC61249-2-21.
The BSC070N10NS5 is supplied in a PG-TDSON-8 package, suitable for surface mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (VDS) for the BSC070N10NS5 is 100V.
The maximum on-resistance (RDS(on)) is 7.0 mΩ when the gate-source voltage is 10V and the drain current is 80A.
The continuous drain current (ID) is rated at 80A at a case temperature of 25°C.
The BSC070N10NS5 is supplied in a PG-TDSON-8 package.
Yes, the BSC070N10NS5 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the BSC070N10NS5 is 1.
The BSC070N10NS5 is REACH Unaffected.