Mfr Part #:

BSC070N10NS3G

Mfr Name: Infineon

The Infineon BSC070N10NS3G is an N-channel MOSFET designed for power applications. It offers a 100V drain-source voltage and a continuous drain current of 90A.

✓ Total Stock: 8,007 pcs

$ Price Range: $3.03

BSC070N10NS3G Available from 4 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Optech Co.,Limited ✓ Non-Authorised Inventory information	3,912 pcs On Request	3912 pcs	On Request	1	On Request	On Request	1850+	On Request	On Request
Xingangxin ✓ Non-Authorised Inventory information	3,480 pcs On Request	3480 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Smaxon Electronics ✓ Non-Authorised Inventory information	500 pcs On Request	500 pcs	On Request	1	On Request	On Request	20+	On Request	On Request
Bristol Electronics ✓ Non-Authorised Inventory information	115 pcs On Request	115 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

BSC070N10NS3G Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Infineon
FET Type	N Channel
Lead Style	Smd
Power Dissipation	114 W (Tc)
SVHC Present	Not Present

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BSC070N10NS3G Description

Short technical summary and product information.

The Infineon BSC070N10NS3G is a high-performance N-channel MOSFET. It is designed for applications requiring robust power handling capabilities.

Key electrical specifications include a drain-source voltage (Vds) of 100V and a continuous drain current (Id) of 90A at 25°C. The on-resistance (Rds(on)) is rated at a low 7mOhm at 50A and 10V gate-source voltage, ensuring efficient power transfer. The gate threshold voltage (Vgs(th)) is 3.5V at 75uA.

This MOSFET features a maximum power dissipation (Pd) of 114W at 25°C. It is housed in a PG-TDSON-8 package, suitable for surface-mount applications where space is a consideration.

This component is suitable for various power switching and control applications in industrial and consumer electronics.

BSC070N10NS3G Quick Information

Product Type: MOSFET

Series: OptiMOS

Canonical Name: Infineon BSC070N10NS3G N Channel MOSFET

Subcategory: N Channel

BSC070N10NS3G Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Lead Free: Yes

BSC070N10NS3G Estimated Pricing

Qty	Low	High
1+	$3.03	$3.03

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSC070N10NS3G Features

100V Drain to Source Voltage.
90A Continuous Drain Current at 25°C.
Low 7 mOhm Drain Source On Resistance.
3.5V Gate Threshold Voltage.
114W maximum Power Dissipation.

BSC070N10NS3G Applications

Suitable for power switching circuits.
Ideal for DC-DC converters.
Used in motor control applications.
Applicable in power supply designs.

BSC070N10NS3G FAQs

6 frequently asked questions generated from this part’s specifications.

What is the drain-source voltage of the BSC070N10NS3G?

The drain-source voltage is 100V.

What is the continuous drain current for the BSC070N10NS3G?

The continuous drain current is 90A at 25°C.

What is the on-resistance of the BSC070N10NS3G?

The on-resistance is 7mOhm at 50A and 10V.

What is the gate threshold voltage for this MOSFET?

The gate threshold voltage is 3.5V at 75uA.

What is the package type for the BSC070N10NS3G?

The package type is PG-TDSON-8.

What is the maximum power dissipation?

The maximum power dissipation is 114W at 25°C.