Mfr Part #:

BSC067N06LS3

Infineon BSC067N06LS3 is a 60V N-Channel Power MOSFET with a maximum continuous drain current of 79A at 25°C and low on-resistance of 6.7mOhm.

✓ Total Stock: 30,222 pcs

$ Price Range: $1.36

BSC067N06LS3 Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Optech Co.,Limited ✓ Non-Authorised Inventory information	30,222 pcs On Request	30222 pcs	On Request	1	On Request	On Request	18+	On Request	On Request

BSC067N06LS3 Description

Short technical summary and product information.

The BSC067N06LS3 from Infineon Technologies is a 60V N-Channel Power MOSFET built on OptiMOS 3 technology. It delivers a continuous drain current of 79A at VGS=10V (TC=25°C) and features an ultra-low maximum on-resistance of 6.7mOhm at ID=50A, VGS=10V. This logic-level MOSFET can be driven with 4.5V or 10V gate voltages and has a maximum gate threshold voltage of 2.2V at 35µA. The gate charge is 67nC at VGS=10V and input capacitance is 5100pF at VDS=30V, making it suitable for high-frequency switching applications such as DC/DC converters and synchronous rectification. The device is avalanche-rated with a single-pulse maximum energy of 47mJ at ID=50A. It is housed in a surface-mount PG-TDSON-8 (8-PowerTDFN) package and qualified per JEDEC standards. The MOSFET is RoHS3 compliant and halogen-free according to IEC61249-2-21. Operating junction temperature range is -55°C to 150°C, with maximum power dissipation of 69W at case temperature 25°C.

BSC067N06LS3 Quick Information

Product Type: Power MOSFET

Series: OptiMOS 3

Canonical Name: BSC067N06LS3 G Infineon OptiMOS 3 60V N-Channel Power MOSFET

Subcategory: N-Channel Power MOSFET

BSC067N06LS3 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Lead Free: Yes

BSC067N06LS3 Estimated Pricing

Qty	Low	High
1+	$1.36	$1.36

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSC067N06LS3 Features

OptiMOS 3 technology for high efficiency.
Low on-resistance of 6.7 milliohms.
Rated for 60V drain-source voltage.
Continuous drain current up to 79A.
100% avalanche tested for robustness.

BSC067N06LS3 Applications

Ideal for high-frequency DC/DC converters.
Used in synchronous rectification circuits.
Suitable for power management applications.
Works in telecom and server power supplies.

BSC067N06LS3 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the drain-source voltage rating of the BSC067N06LS3?

60V

What package is the BSC067N06LS3 available in?

8-PowerTDFN (PG-TDSON-8), surface mount.

What is the operating temperature range?

-55°C to 150°C (junction).

Is the BSC067N06LS3 RoHS compliant?

Yes, RoHS3 compliant and halogen-free according to IEC61249-2-21.

What is the typical gate threshold voltage?

Maximum 2.2V at 35µA drain current.

What is the maximum continuous drain current at 25°C?

79A at VGS=10V and case temperature 25°C.

What is the on-resistance of this MOSFET?

Maximum 6.7mOhm at ID=50A, VGS=10V.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Infineon Technologies
Current	15 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	67 nC @ 10 V
Halogen Free	Yes
Input Capacitance (Ciss) (Max) @ Vds	5100 pF @ 30 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Power Dissipation (Max)	2.5W (Ta)
Rds On (Max) @ Id, Vgs	6.7mOhm @ 50A, 10V
SVHC Present	Not Present
Supplier Device Package	PG-TDSON-8
Technology	MOSFET (Metal Oxide)
Termination Style	SMD (No Leads)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2.2V @ 35µA