| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,386 pcs
|
7386 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | 23+ | On Request | On Request | |
|
72 pcs
|
72 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon BSC066N06NS is a high-performance N-Channel MOSFET designed for various electronic applications. It belongs to the Optimos 5 series and is manufactured by Infineon Technologies.
Key electrical characteristics include a drain-source breakdown voltage of 60V and a continuous drain current of 64A. The on-resistance (Rds On) is rated at 6.6 mOhms, ensuring efficient power handling. The gate-source threshold voltage is 2.8V, and it supports a gate-source voltage of +/- 20V. The MOSFET has a gate charge of 17 nC and a forward transconductance of 65S.
This MOSFET operates within a temperature range of -55°C to +150°C and has a power dissipation of 46W. It features fast switching times with a rise time and fall time of 3 ns, and typical turn-on and turn-off delay times of 7 ns and 12 ns, respectively.
The BSC066N06NS is housed in a PG-TDSON-8 surface-mount package, measuring 5.9mm in length and 1.27mm in height. It is supplied on a reel, with a factory pack quantity of 5000 units.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.03 | $3.03 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The continuous drain current is 64 A.
The drain-source breakdown voltage is 60 V.
The on-resistance is 6.6 mOhms.
The operating temperature range is -55 C to +150 C.
It is an N-Channel MOSFET.
It is supplied in a PG-TDSON-8 package.
It is packaged on a reel.