BSC065N06LS5ATMA1 N-Channel MOSFET from Infineon Technologies with 60V drain-source breakdown voltage and 64A continuous drain current. Features low on-resistance of 6.5mOhm at 10V gate drive.
Mfr Part #:

BSC065N06LS5ATMA1

Available from 2 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel MOSFET from Infineon Technologies with 60V drain-source breakdown voltage and 64A continuous drain current. Features low on-resistance of 6.5mOhm at 10V gate drive.
✓ Total Stock: 6,837 pcs
$ Price Range: $0.50 - $1.22

BSC065N06LS5ATMA1 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
5,000 pcs
5000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,837 pcs
1837 pcs On Request 1 On Request On Request On Request On Request On Request

BSC065N06LS5ATMA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

BSC065N06LS5ATMA1 Description

Short technical summary and product information.

The BSC065N06LS5ATMA1 is an N-channel logic level MOSFET from Infineon's OptiMOS family, designed for high-performance switch mode power supplies (SMPS) and synchronous rectification. It features a maximum drain-source voltage of 60V and continuous drain current of 64A at Tc=25°C. The on-resistance is typically 6.5mOhm at Vgs=10V and Id=32A, enabling low conduction losses.

 

Gate charge is 10nC typical (0V to 4.5V) and input capacitance is 1800pF at Vds=30V, making it suitable for high-frequency switching. The device is 100% avalanche tested with a maximum avalanche energy of 21mJ. It operates over a junction temperature range of -55°C to 150°C and can dissipate up to 46W at Tc=25°C.

 

The MOSFET is housed in a PG-TDSON-8 (8-PowerTDFN) surface mount package, offering excellent thermal performance. It is halogen-free per IEC61249-2-21 and RoHS compliant according to the datasheet. Typical applications include DC-DC converters, telecom power systems, and server power supplies.

BSC065N06LS5ATMA1 Quick Information

Product Type: N-Channel MOSFET
Series: BSC065N06LS5
Canonical Name: Infineon Technologies BSC065N06LS5ATMA1 N-Channel MOSFET
Subcategory: N-Channel MOSFET

BSC065N06LS5ATMA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

BSC065N06LS5ATMA1 Estimated Pricing

Qty Low High
1+ $1.22 $1.22
10+ $0.77 $0.77
100+ $0.50 $0.50
500+ $0.50 $0.50
5,000+ $0.50 $0.50

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSC065N06LS5ATMA1 Features

  • N-channel logic level MOSFET for SMPS.
  • Low on-resistance of 6.5 milliohms.
  • Rated for 60V drain-source voltage.
  • Continuous drain current up to 64A.
  • RoHS compliant and halogen-free per IEC61249-2-21.

BSC065N06LS5ATMA1 Applications

  • Ideal for high performance synchronous rectification.
  • Used in switch mode power supplies (SMPS).
  • Suitable for DC-DC converters.
  • Applicable in telecom and server power systems.

BSC065N06LS5ATMA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage?

60V maximum.

What package is this MOSFET available in?

PG-TDSON-8 (8-PowerTDFN) surface mount package.

What is the operating junction temperature range?

-55°C to 150°C.

Is this component RoHS compliant?

Yes, according to the datasheet it is RoHS compliant and halogen-free per IEC61249-2-21.

What is the maximum continuous drain current?

64A at Tc=25°C, 41A at Tc=100°C, and 15A at TA=25°C.

What is the on-resistance?

Maximum 6.5mOhm at Id=32A and Vgs=10V.

What is the gate charge?

Typical 10nC from 0V to 4.5V; maximum 13nC at Vgs=4.5V per existing data.

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