BSC061N08NS5ATMA1 N-Channel MOSFET from Infineon Technologies. Rated for 80V drain-source voltage, 82A continuous drain current, with a low on-resistance of 6.1 mOhm at 10V gate drive.
Mfr Part #:

BSC061N08NS5ATMA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel MOSFET from Infineon Technologies. Rated for 80V drain-source voltage, 82A continuous drain current, with a low on-resistance of 6.1 mOhm at 10V gate drive.
✓ Total Stock: 11,020 pcs
$ Price Range: $0.64 - $2.25

BSC061N08NS5ATMA1 Available from 1 distributor

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✓ Non-Authorised
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BSC061N08NS5ATMA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

BSC061N08NS5ATMA1 Description

Short technical summary and product information.

The BSC061N08NS5ATMA1 is an 80V N-Channel MOSFET from Infineon Technologies, part of the OptiMOS 5 family. It is designed for high-performance switching power supplies, particularly synchronous rectification, offering low on-resistance and optimized gate charge for efficient high-frequency operation.

 

Key electrical specifications include a drain-source voltage (Vds) of 80V, continuous drain current (Id) of 82A at Tc=25°C, and a maximum on-resistance (Rds(on)) of 6.1 mOhm at Vgs=10V. Typical gate charge (Qg) is 27 nC, and input capacitance (Ciss) is 2500 pF at Vds=40V. The device is avalanche rated with a maximum energy of 50 mJ and supports a pulsed drain current of 328A.

 

The MOSFET is housed in a PG-TDSON-8 (SuperSO8) surface-mount package, which provides excellent thermal performance with a maximum power dissipation of 74W at case temperature. The operating junction temperature range is -55°C to 150°C. It is RoHS3 compliant and halogen-free according to IEC 61249-2-21.

BSC061N08NS5ATMA1 Quick Information

Product Type: MOSFET
Series: OptiMOS 5
Canonical Name: MOSFET N-Channel 80V 82A (Tc) Surface Mount PG-TDSON-8
Subcategory: Single MOSFET

BSC061N08NS5ATMA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

BSC061N08NS5ATMA1 Estimated Pricing

Qty Low High
1+ $2.25 $2.25
10+ $1.44 $1.44
100+ $0.98 $0.98
500+ $0.78 $0.78
1,000+ $0.71 $0.71
5,000+ $0.71 $0.71
10,000+ $0.64 $0.64

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSC061N08NS5ATMA1 Features

  • N-Channel MOSFET rated for 80V drain-source voltage.
  • Continuous drain current up to 82A at 25°C case temperature.
  • Low on-resistance of 6.1 mOhm at 10V gate drive.
  • Optimized for high-performance switching power supplies.
  • Avalanche tested with 50 mJ energy capability.

BSC061N08NS5ATMA1 Applications

  • Ideal for synchronous rectification in SMPS designs.
  • Used in high-efficiency DC-DC converters.
  • Suitable for power management in telecom and computing.
  • Applicable in motor drive and solar inverter circuits.

BSC061N08NS5ATMA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

80V

What is the package type?

PG-TDSON-8 (SuperSO8) surface mount package.

What is the operating temperature range?

-55°C to 150°C (junction temperature).

Is the device RoHS compliant?

Yes, it is RoHS3 compliant and halogen-free according to IEC 61249-2-21.

What is the continuous drain current?

82A at Tc=25°C.

What is the on-resistance?

Maximum 6.1 mOhm at Id=41A, Vgs=10V.

What is the typical gate charge?

27 nC at Vgs=10V.

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