BSC059N04LSGATMA1 N-Channel logic level MOSFET with 40V drain-source breakdown voltage, 73A continuous drain current, and 5.9 mOhm typical on-resistance.
Mfr Part #:

BSC059N04LSGATMA1

Available from 4 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel logic level MOSFET with 40V drain-source breakdown voltage, 73A continuous drain current, and 5.9 mOhm typical on-resistance.
✓ Total Stock: 41,114 pcs
$ Price Range: $0.25 - $1.20

BSC059N04LSGATMA1 Available from 4 distributors

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✓ Non-Authorised
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16,020 pcs
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15,000 pcs
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10,000 pcs
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94 pcs
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BSC059N04LSGATMA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

BSC059N04LSGATMA1 Description

Short technical summary and product information.

The BSC059N04LSGATMA1 is an N-channel logic level MOSFET from Infineon Technologies' OptiMOS 3 family. It features a drain-source breakdown voltage of 40 V and can conduct a continuous drain current of up to 73 A at 25 °C case temperature (16 A at ambient). The device offers a maximum on-resistance of 5.9 mOhm at Vgs=10V and Id=50A, with a typical gate charge of 30 nC. Designed for fast switching in SMPS and DC/DC converters, it is avalanche tested and offers excellent thermal performance. The MOSFET is housed in a PG-TDSON-8 surface mount package and is RoHS compliant and halogen-free according to IEC61249-2-21. Operating junction temperature range is -55 °C to 150 °C.

BSC059N04LSGATMA1 Quick Information

Product Type: MOSFET
Series: OptiMOS 3
Canonical Name: Infineon Technologies BSC059N04LSGATMA1 N-Channel Logic Level MOSFET
Subcategory: N-Channel Logic Level

BSC059N04LSGATMA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

BSC059N04LSGATMA1 Estimated Pricing

Qty Low High
1+ $1.20 $1.20
10+ $0.79 $0.79
100+ $0.49 $0.49
500+ $0.34 $0.34
1,000+ $0.33 $0.33
2,500+ $0.29 $0.29
5,000+ $0.25 $0.25

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSC059N04LSGATMA1 Features

  • N-channel logic level MOSFET.
  • 40V drain-source breakdown voltage.
  • Maximum continuous drain current 73A.
  • Very low typical on-resistance 4.9 mOhm.
  • RoHS and halogen-free compliant.

BSC059N04LSGATMA1 Applications

  • Fast switching SMPS applications.
  • DC/DC converter designs.
  • High efficiency power management.
  • Synchronous rectification circuits.
  • Load switch applications.

BSC059N04LSGATMA1 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the operating temperature range of BSC059N04LSGATMA1?

The operating junction temperature range is -55°C to 150°C.

What is the package type of BSC059N04LSGATMA1?

The MOSFET is housed in an 8-PowerTDFN package (PG-TDSON-8) for surface mount mounting.

Is BSC059N04LSGATMA1 RoHS compliant?

Yes, the datasheet confirms it is RoHS compliant and Pb-free.

What is the maximum drain-source voltage?

The drain-source breakdown voltage is 40 V minimum.

What is the typical on-resistance?

Typical Rds(on) is 4.9 mOhm at Vgs=10V, Id=50A, with a maximum of 5.9 mOhm.

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