| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,987 pcs
|
6987 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Gate Charge | |
| Halogen Free | |
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| Operating Temperature | |
| Tape & Reel |
The Infineon BSC059N04LS6 is a high-performance N-channel Power MOSFET from the OptiMOSTM 6 family. It is specifically optimized for synchronous applications, offering very low on-resistance (RDS(on)) and superior thermal resistance.
Key electrical parameters include a Drain-Source Voltage (VDS) of 40V and a maximum continuous drain current (ID) of 59A at 25°C with VGS=10V. The on-resistance is rated at a maximum of 5.9 mΩ under the same conditions. The device is 100% avalanche tested, ensuring reliability in demanding applications.
This MOSFET is housed in a PG-TDSON-8 package, suitable for surface mounting. It features Pb-free lead plating and is RoHS compliant, as well as halogen-free according to IEC61249-2-21. The component is qualified for industrial applications according to JEDEC standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (VDS) for the BSC059N04LS6 is 40V.
The maximum on-resistance (RDS(on)) for the BSC059N04LS6 is 5.9 mΩ when VGS is 10V and the continuous drain current is 59A.
The continuous drain current (ID) is rated up to 59A at 25°C with VGS=10V, and 41A at 100°C with VGS=10V.
The BSC059N04LS6 MOSFET is supplied in the PG-TDSON-8 package.
Yes, the BSC059N04LS6 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the BSC059N04LS6 is 1.
Yes, the BSC059N04LS6 is Halogen-free.