DistyParts Icon
BSC059N03S G N-Channel MOSFET from Infineon Technologies. 30V drain-source voltage, 73A continuous drain current, 5.5mΩ on-resistance.
Mfr Part #:

BSC059N03S G

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel MOSFET from Infineon Technologies. 30V drain-source voltage, 73A continuous drain current, 5.5mΩ on-resistance.
✓ Total Stock: 137 pcs
$ Price Range: $0.59

BSC059N03S G Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Smaxon Electronics ✓
Non-Authorised Inventory information
137 pcs
On Request
137 pcs On Request 1 On Request On Request 16+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

BSC059N03S G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
View Similar Products (0)

BSC059N03S G Description

Short technical summary and product information.

The BSC059N03S G is an N-Channel enhancement mode power MOSFET from Infineon Technologies, part of the OptiMOS family. It features a maximum drain-to-source voltage of 30V and a continuous drain current rating of 73A at Tc=25°C (17.5A at Ta=25°C). The device offers a low maximum on-resistance of 5.5mΩ at Vgs=10V and Id=50A, enabling high efficiency in power conversion applications.

 

This MOSFET is designed for surface mount assembly in an 8-PowerTDFN package (PG-TDSON-8-1). It has a gate threshold voltage of 2V at Id=35µA and supports drive voltages of 4.5V and 10V for logic-level and standard gate drive compatibility. The maximum gate charge is 21nC at Vgs=5V, and the input capacitance is 2670pF at Vds=15V.

 

The device operates over a junction temperature range of -55°C to 150°C. Maximum power dissipation is 48W at Tc=25°C and 17.5W at Ta=25°C. The gate-source voltage rating is ±20V.

BSC059N03S G Quick Information

Product Type: MOSFET
Canonical Name: Infineon Technologies BSC059N03S G N-Channel MOSFET
Subcategory: Single MOSFET

BSC059N03S G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BSC059N03S G Estimated Pricing

Qty Low High
5,000+ $0.59 $0.59

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSC059N03S G Features

  • N-Channel enhancement mode MOSFET.
  • 30V maximum drain-source voltage.
  • 73A continuous drain current at Tc=25°C.
  • 5.5mΩ maximum on-resistance at 10V.
  • Surface mount PG-TDSON-8-1 package.

BSC059N03S G Applications

  • Used in DC-DC converter circuits.
  • Ideal for load switch applications.
  • Suitable for power management systems.
  • Designed for 30V battery protection.

BSC059N03S G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the BSC059N03S G?

The maximum drain-source voltage (Vdss) is 30V.

What is the maximum continuous drain current?

The maximum continuous drain current is 73A at Tc=25°C and 17.5A at Ta=25°C.

What is the on-resistance of this MOSFET?

The maximum on-resistance is 5.5mΩ at Vgs=10V and Id=50A.

What package is the BSC059N03S G available in?

It is available in an 8-PowerTDFN surface mount package (PG-TDSON-8-1).

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the BSC059N03S G RoHS compliant?

The RoHS status is listed as RoHS3 Compliant, but this is unverified.

Home
Account

Categories