BSC059N03S The Infineon Technologies BSC059N03S is an N-channel Power MOSFET designed for SMPS and notebook DC/DC converters. It offers a 30V breakdown voltage and low on-resistance.
Mfr Part #:

BSC059N03S

Available from 2 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
The Infineon Technologies BSC059N03S is an N-channel Power MOSFET designed for SMPS and notebook DC/DC converters. It offers a 30V breakdown voltage and low on-resistance.
✓ Total Stock: 40,210 pcs
$ Price Range: $2.40

BSC059N03S Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
39,900 pcs
39900 pcs On Request 1 On Request On Request 0502+ On Request On Request
Non-Authorised Inventory information
310 pcs
310 pcs On Request 1 On Request On Request 07+ On Request On Request

BSC059N03S Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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BSC059N03S Description

Short technical summary and product information.

The Infineon Technologies BSC059N03S is a high-performance N-channel Power MOSFET belonging to the OptiMOS®2 family. It is optimized for demanding applications such as Switched-Mode Power Supplies (SMPS) and notebook DC/DC converters, offering fast switching capabilities and excellent efficiency.

 

Key electrical characteristics include a maximum drain-source breakdown voltage of 30V and a very low on-resistance, with a maximum of 5.5 mΩ at a gate-source voltage of 10V. The device features superior thermal resistance, with a junction-to-case thermal resistance of 2.6 K/W, and a maximum power dissipation of 48W at 25°C case temperature.

 

Packaged in a P-TDSON-8 surface-mount package, the BSC059N03S is designed for efficient thermal management and ease of integration into compact designs. Its operating temperature range is from -55°C to 150°C, making it suitable for a wide array of environmental conditions.

BSC059N03S Quick Information

Product Type: Power-Transistor
Canonical Name: BSC059N03S N-channel Logic Level Power MOSFET
Subcategory: N-Channel

BSC059N03S Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

BSC059N03S Estimated Pricing

Qty Low High
1+ $2.40 $2.40

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSC059N03S Features

  • N-channel logic level Power MOSFET
  • 30V drain-source breakdown voltage
  • Low on-resistance, max 5.5mΩ
  • Fast switching times
  • P-TDSON-8 surface mount package

BSC059N03S Applications

  • Fast switching for SMPS applications.
  • Optimized for notebook DC/DC converters.
  • Suitable for high-efficiency power management.
  • Ideal for synchronous rectification circuits.
  • Used in load switching and power distribution.

BSC059N03S FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source breakdown voltage for the BSC059N03S?

The maximum drain-source breakdown voltage is 30V.

What is the typical gate threshold voltage for this MOSFET?

The typical gate threshold voltage is 1.6V.

What is the maximum on-state resistance (RDS(on)) at VGS=10V?

The maximum on-state resistance at VGS=10V is 5.5 mΩ.

What is the maximum continuous drain current at TC=25°C?

The maximum continuous drain current at TC=25°C is 50A.

What is the package type for the BSC059N03S?

The package type is P-TDSON-8.

What is the operating temperature range for this transistor?

The operating and storage temperature range is -55°C to 150°C.

What is the RoHS status of the BSC059N03S?

The RoHS status is RoHS3 Compliant.

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