| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
39,900 pcs
|
39900 pcs | On Request | 1 | On Request | On Request | 0502+ | On Request | On Request | |
|
310 pcs
|
310 pcs | On Request | 1 | On Request | On Request | 07+ | On Request | On Request |
| Category | |
| Manufacturer Name |
The Infineon Technologies BSC059N03S is a high-performance N-channel Power MOSFET belonging to the OptiMOS®2 family. It is optimized for demanding applications such as Switched-Mode Power Supplies (SMPS) and notebook DC/DC converters, offering fast switching capabilities and excellent efficiency.
Key electrical characteristics include a maximum drain-source breakdown voltage of 30V and a very low on-resistance, with a maximum of 5.5 mΩ at a gate-source voltage of 10V. The device features superior thermal resistance, with a junction-to-case thermal resistance of 2.6 K/W, and a maximum power dissipation of 48W at 25°C case temperature.
Packaged in a P-TDSON-8 surface-mount package, the BSC059N03S is designed for efficient thermal management and ease of integration into compact designs. Its operating temperature range is from -55°C to 150°C, making it suitable for a wide array of environmental conditions.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source breakdown voltage is 30V.
The typical gate threshold voltage is 1.6V.
The maximum on-state resistance at VGS=10V is 5.5 mΩ.
The maximum continuous drain current at TC=25°C is 50A.
The package type is P-TDSON-8.
The operating and storage temperature range is -55°C to 150°C.
The RoHS status is RoHS3 Compliant.