| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
35,000 pcs
|
35000 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Tape & Reel |
The BSC0588NSI from Infineon Technologies is a high-performance N-Channel MOSFET designed for various electronic applications. It features a drain-source breakdown voltage of 80V and a continuous drain current rating of 100A, making it suitable for power switching applications.
The MOSFET operates with a gate-source threshold voltage of 3.5V and has an Rds On resistance of 5.7 mOhms, ensuring efficient power transfer. It is designed for a maximum operating temperature of 150 C and a minimum of -55 C.
This component is packaged in a TISON-8 case and utilizes SMD/SMT mounting. The OptiMOS 3 series designation indicates its advanced technology for power management solutions. Key electrical characteristics include a gate charge of 56 nC, a typical turn-on delay of 16 ns, and a typical turn-off delay of 32 ns.
Additional specifications include a power dissipation of 2.5W, a maximum gate-source voltage of 20V, and a minimum forward transconductance of 80 S. The N-Channel enhancement mode transistor is designed for single channel operation.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 80 V.
The continuous drain current is 100 A.
The Rds On drain source resistance is 5.7 mOhms.
The gate source threshold voltage is 3.5 V.
The operating temperature range is -55 C to 150 C.
The BSC0588NSI is in a TISON-8 package.
The BSC0588NSI is designed for SMD/SMT mounting.
