| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
11,020 pcs
|
11020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The BSC057N08NS3GATMA1 is an N-Channel enhancement mode MOSFET manufactured by Infineon Technologies using metal oxide semiconductor technology. It is designed for high efficiency power conversion applications. The device features a maximum drain-to-source voltage of 80V and can handle continuous drain currents up to 16A at 25°C ambient temperature (Ta) and up to 100A at 25°C case temperature (Tc). The on-resistance is 5.7mOhm maximum at Vgs=10V and Id=50A. The gate charge is 56nC maximum at Vgs=10V, and input capacitance is 3900pF maximum at Vds=40V. The threshold voltage is 3.5V maximum at Id=73µA. The recommended drive voltage is 6V or 10V. Maximum power dissipation is 2.5W at ambient temperature and 114W at case temperature. The device operates over a junction temperature range of -55°C to 150°C. It is housed in a surface-mount 8-PowerTDFN package (PG-TDSON-8-5) with an MSL rating of 1 (unlimited). The device is RoHS3 compliant and REACH unaffected (unverified).
| Qty | Low | High |
|---|---|---|
| 1+ | $2.37 | $2.37 |
| 10+ | $1.52 | $1.52 |
| 100+ | $1.03 | $1.03 |
| 500+ | $0.82 | $0.82 |
| 1,000+ | $0.74 | $0.74 |
| 2,500+ | $0.73 | $0.73 |
| 5,000+ | $0.69 | $0.69 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 80V.
The continuous drain current (Id) is 16A at 25°C ambient temperature and 100A at 25°C case temperature.
The maximum Rds(on) is 5.7mOhm at Id=50A and Vgs=10V.
The maximum gate charge is 56nC at Vgs=10V.
The operating junction temperature range is -55°C to 150°C.
It is available in an 8-PowerTDFN package (PG-TDSON-8-5) for surface mount.
The device is listed as RoHS3 Compliant, but this is unverified and should be confirmed.