| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
10,230 pcs
|
10230 pcs | On Request | 1 | On Request | On Request | 10+ | On Request | On Request | |
|
2,300 pcs
|
2300 pcs | On Request | 1 | On Request | On Request | 0352+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The BSC052N03S G is an N-channel power MOSFET manufactured by Infineon Technologies. It supports a maximum drain-to-source voltage of 30 V and a maximum continuous drain current of 80 A at Tc=25°C, or 18 A at Ta=25°C.
With a maximum on-resistance of 5.2 mΩ at 50 A drain current and 10 V gate drive, this MOSFET offers efficient conduction in low-voltage power circuits. Total gate charge is 22 nC at VGS=5 V and input capacitance is 2820 pF at VDS=15 V, providing design parameters for switching-loss estimation.
The device is supplied in a surface-mount 8-PowerTDFN package (PG-TDSON-8-6) and operates over a junction temperature range of -55°C to 150°C. Maximum power dissipation is 54 W at Tc=25°C and 2.8 W at Ta=25°C.
| Qty | Low | High |
|---|---|---|
| 5,000+ | $0.63 | $0.63 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vds) is 30 V.
80 A at Tc=25°C and 18 A at Ta=25°C.
5.2 mΩ at Id=50A and Vgs=10V.
22 nC at Vgs=5V.
Surface-mount 8-PowerTDFN package, also called PG-TDSON-8-6.
-55°C to 150°C junction temperature.
Existing data marks it as RoHS3 Compliant, though this status is unverified.