| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
28,665 pcs
|
28665 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Technology |
The BSC050N03MS G from VBsemi is a high-performance N-Channel MOSFET designed for various electronic applications. It offers a drain-source voltage (Vds) of 30V and a continuous drain current (Id) of 120A, making it suitable for power management tasks.
This MOSFET utilizes the VB technology and is housed in a compact DFN8(5X6) package, facilitating efficient board space utilization and thermal performance. The gate-source voltage (Vgs) is rated at ±20V, with a typical gate threshold voltage (Vth) of 1.7V.
Compliance information indicates RoHS3 compliance and an MSL rating of 1, signifying its suitability for a wide range of manufacturing processes. The REACH status is unaffected. This component is recommended for applications requiring robust power switching capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vds) is 30V.
The continuous drain current (Id) is 120A.
The BSC050N03MS G comes in a DFN8(5X6) package.
The typical gate threshold voltage (Vthyp) is 1.7V.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.