| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
316 pcs
|
316 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Gate Charge | |
| Halogen Free | |
| Mounting Type | |
| Transistor Type |
The Infineon BSC0504NSI is an N-channel OptiMOSTM5 Power MOSFET designed for high-performance buck converters. It features a 30V drain-source voltage and a very low on-resistance of 3.7 mΩ at VGS=4.5V. The device includes a monolithic integrated Schottky-like diode and is 100% avalanche tested.
Key electrical parameters include a maximum continuous drain current of 72A at TC=25°C and a maximum pulsed drain current of 288A. The gate source voltage is rated for ±20V.
This MOSFET is supplied in a PG-TDSON-8 package suitable for surface mounting. It is Pb-free and Halogen-free, compliant with RoHS and IEC61249-2-21 standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.05 | $0.05 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (VDS) for the BSC0504NSI is 30V.
The maximum on-resistance (RDS(on)) for the BSC0504NSI is 3.7 mΩ.
The continuous drain current (ID) for the BSC0504NSI is 72A at TC=25°C with VGS=10V.
The BSC0504NSI is supplied in a PG-TDSON-8 package.
The BSC0504NSI is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the BSC0504NSI is 1 Unlimited.
Yes, the BSC0504NSI features a monolithic integrated Schottky-like diode.