BSC047N08NS3GATMA1 N-Channel MOSFET from Infineon Technologies with 80V drain-source breakdown voltage, 100A continuous drain current (Tc=25°C), and low 4.7mOhm on-resistance. Surface mount package in 8-PowerTDFN (PG-TDSON-8-1).
Mfr Part #:

BSC047N08NS3GATMA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel MOSFET from Infineon Technologies with 80V drain-source breakdown voltage, 100A continuous drain current (Tc=25°C), and low 4.7mOhm on-resistance. Surface mount package in 8-PowerTDFN (PG-TDSON-8-1).
✓ Total Stock: 386 pcs
$ Price Range: $0.79 - $2.52

BSC047N08NS3GATMA1 Available from 1 distributor

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✓ Non-Authorised
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386 pcs
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BSC047N08NS3GATMA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

BSC047N08NS3GATMA1 Description

Short technical summary and product information.

The BSC047N08NS3GATMA1 is an N-Channel MOSFET manufactured by Infineon Technologies. It features a drain-source breakdown voltage of 80V and a continuous drain current rating of 18A at 25°C ambient temperature, or 100A at 25°C case temperature. The device offers a low maximum on-resistance of 4.7mOhm at 50A drain current and 10V gate drive. Gate charge is 69nC maximum at 10V, and input capacitance is 4800pF at 40V drain-source voltage. The gate threshold voltage is 3.5V maximum at 90µA drain current. Maximum gate-source voltage is ±20V. Power dissipation is 2.5W at ambient temperature and 125W at case temperature. Operating junction temperature range is -55°C to 150°C. The MOSFET uses MOSFET (Metal Oxide) technology and is designed for surface mount mounting. It is supplied in an 8-PowerTDFN package, also known as PG-TDSON-8-1. The device is RoHS3 compliant and has an MSL of 1 (unlimited). It is suitable for various power switching applications requiring high efficiency and low conduction losses.

BSC047N08NS3GATMA1 Quick Information

Product Type: N-Channel MOSFET
Canonical Name: Infineon Technologies BSC047N08NS3GATMA1 N-Channel MOSFET, 80V, 18A/100A, TDSON-8
Subcategory: N-Channel MOSFET

BSC047N08NS3GATMA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BSC047N08NS3GATMA1 Estimated Pricing

Qty Low High
1+ $2.52 $2.52
10+ $1.66 $1.66
100+ $1.15 $1.15
500+ $1.01 $1.01
5,000+ $0.79 $0.79

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSC047N08NS3GATMA1 Features

  • N-Channel MOSFET with 80V drain-source voltage.
  • Continuous drain current up to 100A at 25°C case.
  • Low on-resistance of 4.7mOhm maximum.
  • Surface mount TDSON-8 package.
  • RoHS3 compliant and MSL 1 unlimited.

BSC047N08NS3GATMA1 Applications

  • Suitable for high-efficiency power switching.
  • Used in DC-DC converter circuits.
  • Ideal for motor drive applications.
  • Applicable in battery management systems.

BSC047N08NS3GATMA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the BSC047N08NS3GATMA1?

80V.

What package does the BSC047N08NS3GATMA1 come in?

8-PowerTDFN (PG-TDSON-8-1) surface mount package.

What is the operating temperature range?

-55°C to 150°C junction temperature.

Is the BSC047N08NS3GATMA1 RoHS compliant?

Yes, it is RoHS3 compliant (unverified).

What is the maximum continuous drain current?

18A at 25°C ambient, 100A at 25°C case temperature.

What is the on-resistance of this MOSFET?

4.7mOhm maximum at 50A drain current and 10V gate drive.

What is the gate charge?

69nC maximum at 10V gate-source voltage.

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