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BSC046N02KSGAUMA1 N-Channel MOSFET from Infineon Technologies with 20V drain-source voltage and 19A continuous drain current (Ta) or 80A (Tc). Features low on-resistance of 4.6mOhm at 50A, 4.5V gate drive.
Mfr Part #:

BSC046N02KSGAUMA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel MOSFET from Infineon Technologies with 20V drain-source voltage and 19A continuous drain current (Ta) or 80A (Tc). Features low on-resistance of 4.6mOhm at 50A, 4.5V gate drive.
Total Stock: 5,000 pcs
$ Price Range: $0.60 - $2.21

BSC046N02KSGAUMA1 Available from 1 distributor

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
5,000 pcs
5000 pcs On Request 1 On Request On Request On Request On Request On Request

BSC046N02KSGAUMA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Continuous Drain Current (Maximum @ Tc=25 °C)
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Power Dissipation (Maximum @ TC=25 °C)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

BSC046N02KSGAUMA1 Description

Short technical summary and product information.

The BSC046N02KSGAUMA1 is an N-Channel enhancement mode MOSFET from Infineon Technologies, designed for low-voltage power switching applications. It features a maximum drain-source voltage (Vdss) of 20V and can deliver continuous drain current of 19A at ambient temperature (Ta=25°C) or 80A at case temperature (Tc=25°C).

 

With a maximum on-resistance of 4.6mOhm at 50A drain current and 4.5V gate-source voltage, this MOSFET offers low conduction losses. The gate charge is 27.6nC at 4.5V, and input capacitance is 4100pF at 10V Vds, enabling efficient switching. The drive voltage range is 2.5V to 4.5V, and the gate threshold voltage is 1.2V maximum at 110µA.

 

The device is housed in a compact 8-PowerTDFN surface-mount package (PG-TDSON-8-1) and supports a wide operating junction temperature range of -55°C to 150°C. Maximum power dissipation is 2.8W at ambient temperature and 48W at case temperature. It is suitable for applications requiring high efficiency in small form factors.

 

Compliance information includes RoHS3 (unverified), MSL Level 1, and REACH unaffected. The part is available from distributors in tape & reel, cut tape, and Digi-Reel options.

BSC046N02KSGAUMA1 Quick Information

Product Type: N-Channel MOSFET
Canonical Name: BSC046N02KSGAUMA1 - N-Channel MOSFET, 20V, 19A/80A, TDSON-8
Subcategory: Single MOSFET

BSC046N02KSGAUMA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 3
REACH Status: REACH Unaffected

BSC046N02KSGAUMA1 Estimated Pricing

Qty Low High
1+ $2.21 $2.21
10+ $1.41 $1.41
100+ $0.96 $0.96
500+ $0.77 $0.77
1,000+ $0.70 $0.70
2,000+ $0.65 $0.65
5,000+ $0.63 $0.63
10,000+ $0.60 $0.60

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSC046N02KSGAUMA1 Features

  • N-Channel MOSFET with 20V drain-source voltage.
  • Low on-resistance of 4.6mOhm at 50A.
  • High continuous drain current up to 80A.
  • Surface-mount PG-TDSON-8-1 package.
  • Operating temperature range -55°C to 150°C.

BSC046N02KSGAUMA1 Applications

  • Used in low-voltage power switching circuits.
  • Suitable for DC-DC converter applications.
  • Ideal for battery management systems.
  • Applied in load switch and OR-ing functions.

BSC046N02KSGAUMA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of BSC046N02KSGAUMA1?

The maximum drain-source voltage (Vdss) is 20 V.

What package does the BSC046N02KSGAUMA1 come in?

It is available in an 8-PowerTDFN surface-mount package (PG-TDSON-8-1).

What is the operating temperature range of the BSC046N02KSGAUMA1?

The junction temperature range is -55°C to 150°C.

Is the BSC046N02KSGAUMA1 RoHS compliant?

Yes, it is listed as RoHS3 compliant (unverified).

What is the gate threshold voltage of this MOSFET?

Maximum gate threshold voltage is 1.2V at 110µA drain current.

What is the on-resistance of BSC046N02KSGAUMA1?

Maximum on-resistance (Rds(on)) is 4.6mOhm at 50A drain current and 4.5V gate-source voltage.

What is the maximum drain current rating?

Continuous drain current is 19A at ambient temperature 25°C and 80A at case temperature 25°C.

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