| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,800 pcs
|
6800 pcs | On Request | 1 | On Request | On Request | 12+ | On Request | On Request |
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| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The BSC042NE7NS3 G is an N-Channel power MOSFET manufactured by Infineon Technologies. It features a drain-source voltage of 75V and a continuous drain current of 132A at Tc=25°C (19A at Ta=25°C). The device has a maximum on-state resistance of 4.2mΩ at 50A and 10V gate drive.
This MOSFET utilizes MOSFET (Metal Oxide) technology and offers a gate charge of 69nC at 10V, with an input capacitance of 4800pF at 37.5V drain-source voltage. The maximum gate threshold voltage is 3.8V at 91µA drain current. The device is designed for surface mount assembly in an 8-PowerTDFN package (PG-TDSON-8-1 supplier package).
The operating junction temperature range is -55°C to 150°C, with a maximum power dissipation of 125W at Tc=25°C (2.5W at Ta=25°C). The MOSFET is RoHS3 compliant and REACH unaffected, with an MSL rating of 1 (unlimited).
| Qty | Low | High |
|---|---|---|
| 1+ | $3.47 | $3.47 |
| 10+ | $2.25 | $2.25 |
| 100+ | $1.56 | $1.56 |
| 500+ | $1.30 | $1.30 |
| 1,000+ | $1.21 | $1.21 |
| 2,500+ | $1.15 | $1.15 |
| 5,000+ | $1.12 | $1.12 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
75V.
8-PowerTDFN (PG-TDSON-8-1).
-55°C to 150°C (junction).
Yes, it is listed as RoHS3 compliant.
4.2mΩ at 50A, 10V.
69nC at 10V.
132A at Tc=25°C, 19A at Ta=25°C.