| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,246 pcs
|
4246 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request |
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| Drive Voltage (Max Rds On, Min Rds On) | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Tape & Reel | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Infineon BSC042N03S G is an N-Channel enhancement mode power MOSFET built with MOSFET (Metal Oxide) technology. It is designed for high-efficiency power conversion applications requiring low on-resistance and high current capability.
Key electrical specifications include a maximum drain-source voltage of 30V, a continuous drain current of 20A at ambient temperature and 95A at case temperature, and a maximum drain-source on-resistance of just 4.2mOhm at 50A with 10V gate drive. The device supports a gate-source voltage range of ±20V and has a gate threshold voltage of 2V at 50µA drain current.
The MOSFET is housed in a surface-mount 8-PowerTDFN package with a supplier device package designation of PG-TDSON-8-5. It can dissipate up to 62.5W at the case temperature and operates over a junction temperature range of -55°C to 150°C. Input capacitance is 3660pF at 15V drain-source, and total gate charge is 28nC at 5V gate-source.
| Qty | Low | High |
|---|---|---|
| 5,000+ | $0.69 | $0.69 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 30V.
The maximum continuous drain current is 20A at ambient temperature and 95A at case temperature.
The operating junction temperature range is -55°C to 150°C.
It is available in a surface-mount 8-PowerTDFN package (PG-TDSON-8-5).
RoHS3 compliance is indicated but unverified.
The maximum drain-source on-resistance is 4.2mOhm at 50A drain current and 10V gate-source voltage.
The maximum gate threshold voltage is 2V at 50µA drain current.