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BSC042N03MS G The BSC042N03MS G from VBsemi is a single N-channel MOSFET featuring Trench Technology. It offers a Vds of 30V and a continuous drain current of 160A.
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BSC042N03MS G

Available from 1 distributors
Mfr Name: VBsemi
VBsemi
The BSC042N03MS G from VBsemi is a single N-channel MOSFET featuring Trench Technology. It offers a Vds of 30V and a continuous drain current of 160A.
✓ Total Stock: 29,605 pcs
$ Price Range: $2.40

BSC042N03MS G Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
29,605 pcs
On Request
29605 pcs On Request 1 On Request On Request 19+ On Request On Request
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BSC042N03MS G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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BSC042N03MS G Description

Short technical summary and product information.

The BSC042N03MS G is a single N-channel MOSFET manufactured by VBsemi, utilizing Trench Technology for enhanced performance. This component is designed for applications requiring a drain-source voltage (Vds) of up to 30V and can handle a continuous drain current (Id) of 160A.

 

Key electrical characteristics include a typical gate threshold voltage (Vgs(th)) of 1.7V and a low on-state resistance (RDS(on)). Specifically, the RDS(on) is 2.5mΩ at a gate-source voltage (Vgs) of 4.5V and 1.8mΩ at 10V Vgs, making it suitable for power switching applications where efficiency is critical.

 

The MOSFET is housed in a DFN8(5X6) package, indicating a surface-mount form factor. The N-channel polarity and Trench technology contribute to its robust performance characteristics. This component is ideal for various power management circuits and electronic designs requiring reliable switching capabilities.

BSC042N03MS G Quick Information

Product Type: MOSFET
Canonical Name: BSC042N03MS G N-Channel Trench MOSFET
Subcategory: Single N-Channel

BSC042N03MS G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BSC042N03MS G Estimated Pricing

Qty Low High
1+ $2.40 $2.40

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSC042N03MS G Features

  • Single N-channel MOSFET with Trench Technology.
  • 30V drain-source voltage rating.
  • 160A continuous drain current capability.
  • Low on-state resistance of 1.8mΩ.
  • DFN8(5X6) package for surface mounting.

BSC042N03MS G Applications

  • Used in power management circuits.
  • Suitable for DC-DC converters.
  • Ideal for load switching applications.
  • Applicable in battery protection systems.
  • Used in motor drive circuits.

BSC042N03MS G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the BSC042N03MS G?

30V.

What is the gate-source voltage rating?

±20V.

What is the continuous drain current rating?

160A.

What is the typical gate threshold voltage?

1.7V.

What is the typical on-resistance at VGS=4.5V?

2.5mΩ.

What is the typical on-resistance at VGS=10V?

1.8mΩ.

What package is the BSC042N03MS G available in?

DFN8(5X6).

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