| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
105 pcs
|
105 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The BSC040N08NS5ATMA1 is an N-Channel enhancement mode power MOSFET from Infineon Technologies, part of the OptiMOS 5 family. Designed for high-performance switched-mode power supplies (SMPS), it offers a drain-source voltage of 80V and a continuous drain current of 121A at 25°C (76A at 100°C). The maximum on-resistance is just 4 mOhm at VGS=10V and ID=50A, enabling high efficiency in power conversion stages.
Key electrical characteristics include a typical gate charge of 43 nC (maximum 54 nC at 10V), input capacitance of 3900 pF at VDS=40V, and output charge of 52 nC. The device is avalanche rated with a single-pulse avalanche energy of 120 mJ. The gate threshold voltage is 3.8V maximum at ID=67μA, and the maximum gate-source voltage is ±20V.
The MOSFET is housed in a surface-mount PG-TDSON-8 package (8-PowerTDFN) with a supplier device package of PG-TDSON-8-7. It supports an operating junction temperature range of -55°C to 150°C and has a maximum power dissipation of 104W at case temperature 25°C. The component is halogen-free per IEC61249-2-21 and has Pb-free lead plating, as verified in the datasheet.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.66 | $2.66 |
| 10+ | $1.72 | $1.72 |
| 100+ | $1.18 | $1.18 |
| 500+ | $0.94 | $0.94 |
| 1,000+ | $0.92 | $0.92 |
| 5,000+ | $0.92 | $0.92 |
| 10,000+ | $0.81 | $0.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 80 V.
It uses a surface-mount 8-PowerTDFN package (PG-TDSON-8) with supplier device package PG-TDSON-8-7.
The operating junction temperature range is -55°C to 150°C.
Yes, the datasheet confirms RoHS compliance and Pb-free lead plating. Halogen-free per IEC61249-2-21 is also verified.
The maximum drain-to-source on-resistance (Rds(on)) is 4 mΩ at VGS=10V, ID=50A.
The typical total gate charge (Qg) is 43 nC at VGS=10V, with a maximum of 54 nC.