| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,100 pcs
|
1100 pcs | On Request | 1 | On Request | On Request | 09+ | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Halogen Free | |
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| Voltage |
The Infineon Technologies BSC035N04LS is a high-performance N-channel MOSFET belonging to the OptiMOSTM 3 family. It is engineered for demanding applications such as Switched-Mode Power Supplies (SMPS) and DC/DC converters, benefiting from optimized technology for enhanced efficiency.
Key electrical characteristics include a maximum Drain-Source Voltage (VDS) of 40V and a very low on-resistance (RDS(on)) of 3.5 mΩ at a gate-source voltage of 10V and 25°C. The continuous drain current (ID) is rated up to 112A at 25°C with VGS=10V, and 71A at 100°C. It also features a high pulsed drain current capability of 448A and is 100% avalanche tested for reliability.
This MOSFET is housed in a PG-TDSON-8 package, suitable for surface mounting. It is designed with fast switching capabilities and an excellent figure of merit (FOM), making it ideal for power management solutions where efficiency and performance are critical. The component is Pb-free and Halogen-free, complying with environmental standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 40 V.
The package is PG-TDSON-8 (surface mount).
The maximum continuous drain current is 112 A at TC=25°C with VGS=10V.
The maximum on-resistance is 3.5 mΩ at VGS=10V and TC=25°C.
The gate-source voltage range is ±20 V.
The maximum power dissipation is 69 W at case temperature.
The single pulse avalanche energy is 65 mJ at ID=50A and RGS=25Ω.