BC847B/215
Nexperia USA Inc.
The Nexperia USA Inc. BC847B/215 is a bipolar transistor. It is RoHS3 Compliant and has an MSL Level 1 rating.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4,025 pcs
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4025 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request | |
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600 pcs
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600 pcs | On Request | 1 | On Request | On Request | 22+ | On Request | On Request |
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| Manufacturer Name | |
| SVHC Present | |
| Tape & Reel |
The Infineon Technologies BSC030P03NS3G is a P-Channel MOSFET designed for power applications. It features a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 25.4A. The device exhibits a low on-resistance of 3mΩ at 10V/50A and a power dissipation of 2.5W.
This MOSFET has a gate threshold voltage (Vgs(th)) of 3.1V at 345uA. It is packaged in a TDSON-8-EP (5x6) surface-mount package, making it suitable for various power management systems and switching applications.
Key electrical characteristics include its P-Channel type and specific on-resistance and threshold voltage ratings. The device's specifications suggest suitability for applications requiring efficient power switching and management.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) for the BSC030P03NS3G is 30V.
The continuous drain current (Id) for the BSC030P03NS3G is 25.4A.
The drain source on-resistance (RDS(on)) is 3mΩ at 10V/50A.
The power dissipation (Pd) for the BSC030P03NS3G is 2.5W.
The gate threshold voltage (Vgs(th)) is 3.1V at 345uA.
The BSC030P03NS3G is a P-Channel MOSFET.
The BSC030P03NS3G is supplied in a TDSON-8-EP(5x6) package.