BSC030N04NSGATMA1 N-Channel MOSFET from Infineon with 40V drain-source voltage, 23A (Ta) / 100A (Tc) continuous drain current, and 3mΩ maximum on-resistance. Surface-mount package PG-TDSON-8-1.
Mfr Part #:

BSC030N04NSGATMA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel MOSFET from Infineon with 40V drain-source voltage, 23A (Ta) / 100A (Tc) continuous drain current, and 3mΩ maximum on-resistance. Surface-mount package PG-TDSON-8-1.
✓ Total Stock: 31,020 pcs
$ Price Range: $0.46 - $1.65

BSC030N04NSGATMA1 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
31,020 pcs
31020 pcs On Request 1 On Request On Request On Request On Request On Request

BSC030N04NSGATMA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

BSC030N04NSGATMA1 Description

Short technical summary and product information.

The BSC030N04NSGATMA1 is an N-channel enhancement mode MOSFET from Infineon's OptiMOS 3 family. It features a drain-source voltage rating of 40V and supports continuous drain currents of 23A at ambient temperature and 100A at case temperature. The device offers an ultra-low maximum on-resistance of 3mΩ at 50A and 10V gate drive, enabling high efficiency in power conversion applications.

 

Key electrical characteristics include a maximum gate charge of 61nC at 10V, input capacitance of 4900pF at 20V drain-source, and a gate threshold voltage of 4V. The MOSFET is avalanche rated with a single-pulse avalanche current of 50A and energy of 115mJ, ensuring robust operation under inductive load conditions. Operating junction temperature ranges from -55°C to 150°C.

 

The device is housed in a surface-mount 8-PowerTDFN package (PG-TDSON-8-1), which provides excellent thermal performance with a maximum power dissipation of 83W at case temperature. It is designed for fast switching in SMPS and DC-DC converter applications, offering a superior figure of merit (gate charge x on-resistance).

BSC030N04NSGATMA1 Quick Information

Product Type: N-Channel MOSFET
Series: OptiMOS 3
Canonical Name: Infineon BSC030N04NSGATMA1 N-Channel MOSFET, 40V, 23A/100A, TDSON-8
Subcategory: N-Channel MOSFET

BSC030N04NSGATMA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Yes

BSC030N04NSGATMA1 Estimated Pricing

Qty Low High
1+ $1.65 $1.65
10+ $1.04 $1.04
100+ $0.69 $0.69
500+ $0.54 $0.54
1,000+ $0.50 $0.50
2,000+ $0.46 $0.46

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSC030N04NSGATMA1 Features

  • N-channel MOSFET with 40V drain-source voltage.
  • Ultra-low 3mΩ on-resistance at 10V gate drive.
  • High continuous drain current up to 100A.
  • Fast switching OptiMOS 3 technology.
  • Avalanche rated for robust operation.

BSC030N04NSGATMA1 Applications

  • Suitable for DC-DC converters and SMPS.
  • Used in high-current power management.
  • Ideal for synchronous rectification circuits.
  • Applicable in motor control and battery protection.

BSC030N04NSGATMA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

40V.

What package does this MOSFET come in?

8-PowerTDFN (PG-TDSON-8-1).

What is the operating temperature range?

-55°C to 150°C (junction).

Is this component RoHS compliant?

Yes, RoHS3 compliant and halogen-free per IEC61249-2-21.

What is the maximum continuous drain current?

23A at 25°C ambient, 100A at 25°C case.

What is the on-resistance?

3mΩ maximum at 50A, 10V gate drive.

What is the gate charge?

61nC maximum at 10V gate-source voltage.

Home
Account

Categories