| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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|
10,733 pcs
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10733 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| SVHC Present | |
| Storage Temperature | |
| Tape & Reel |
The Infineon Technologies BSC030N04NSG is a high-performance N-Channel MOSFET belonging to the OptiMOS 3 series. It is designed for applications requiring efficient power switching and control.
Key electrical specifications include a drain-source breakdown voltage of 40V, a continuous drain current of 23A, and a low drain-source on-resistance of 3 mOhms. The gate-source threshold voltage is 2V, and the device supports a gate-source voltage of up to 20V. It also features a gate charge of 61 nC and a fall time of 5 ns.
This MOSFET operates within a temperature range of -55°C to +150°C and has a power dissipation rating of 2.5W. The channel mode is enhancement, and it is a single-channel device constructed using Silicon (Si) technology.
The BSC030N04NSG is supplied in a TDSON-8 surface-mount package, typically on a reel for automated assembly. Its SMD/SMT mounting style makes it suitable for modern PCB designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 40 V.
The package is TDSON-8.
The operating temperature range is -55°C to 150°C.
The continuous drain current is 23 A.
The drain-source on-resistance is 3 mOhms.
The gate-source threshold voltage is 2 V.
