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BSC029N025SG N-Channel Power MOSFET from Infineon Technologies with 25V drain-source voltage and 100A continuous drain current. Features low 2.9mOhm Rds(on) at 50A, 10V drive.
Mfr Part #:

BSC029N025SG

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel Power MOSFET from Infineon Technologies with 25V drain-source voltage and 100A continuous drain current. Features low 2.9mOhm Rds(on) at 50A, 10V drive.
✓ Total Stock: 10,234 pcs
$ Price Range: $1.19

BSC029N025SG Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
10,234 pcs
On Request
10234 pcs On Request 1 On Request On Request 0702+ On Request On Request
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BSC029N025SG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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BSC029N025SG Description

Short technical summary and product information.

The BSC029N025SG is an N-Channel power MOSFET manufactured by Infineon Technologies, designed for high-efficiency power conversion applications. It features a drain-source voltage (Vdss) of 25V and a continuous drain current of 100A at case temperature (Tc), with a maximum Rds(on) of only 2.9mOhm at 50A and 10V gate drive. The device supports drive voltages of 4.5V and 10V, with a maximum gate threshold voltage of 2V at 80µA.

 

With a maximum gate charge of 41nC at 5V and input capacitance of 5090pF at 15V, this MOSFET is optimized for switching applications requiring low conduction and switching losses. The operating junction temperature range is -55°C to 150°C, and maximum power dissipation is 78W at case temperature (Tc) and 2.8W at ambient temperature (Ta).

 

Packaged in an 8-PowerTDFN (PG-TDSON-8-1) surface-mount package, the BSC029N025SG is suitable for space-constrained designs. It is RoHS3 compliant and has an MSL of 1 (unlimited). Typical applications include DC-DC converters, motor drives, and power management circuits where low resistance and high current capability are required.

BSC029N025SG Quick Information

Product Type: Power MOSFET
Canonical Name: Infineon BSC029N025SG N-Channel Power MOSFET
Subcategory: Single MOSFET

BSC029N025SG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 3
REACH Status: REACH Unaffected

BSC029N025SG Estimated Pricing

Qty Low High
253+ $1.19 $1.19

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSC029N025SG Features

  • N-Channel MOSFET with 25V drain-source voltage.
  • Continuous drain current up to 100A at case temperature.
  • Ultra-low on-resistance of 2.9mOhm typical.
  • Low gate charge of 41nC for efficient switching.
  • Surface-mount 8-PowerTDFN package for compact designs.

BSC029N025SG Applications

  • Ideal for low-voltage high-current DC-DC converters.
  • Suitable for motor drive and power management circuits.
  • Used in battery protection and load switch applications.
  • Applicable in synchronous rectification and OR-ing.

BSC029N025SG FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage (Vdss) of the BSC029N025SG?

25 V.

What package does the BSC029N025SG come in?

8-PowerTDFN (PG-TDSON-8-1) surface-mount package.

What is the operating temperature range?

-55°C to 150°C (junction).

Is the BSC029N025SG RoHS compliant?

Yes, RoHS3 compliant.

What is the maximum drain current?

100 A at case temperature (Tc), 24 A at ambient (Ta).

What is the typical Rds(on)?

2.9 mOhm maximum at 50 A, 10 V gate drive.

What is the gate threshold voltage?

2 V maximum at Id = 80 µA.

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