| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
103,514 pcs
|
103514 pcs | On Request | 1 | On Request | On Request | 18+17+PBF | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| SVHC Present |
The Infineon Technologies BSC028N06NS is a high-performance N-channel Power MOSFET from the OptiMOS™ family. It is designed for demanding applications such as switched-mode power supplies (SMPS) and synchronous rectification.
Key electrical characteristics include a maximum drain-source voltage (Vds) of 60V and a low on-resistance (Rds(on)) of 2.8 mOhm at a gate-source voltage (Vgs) of 10V and a continuous drain current (Id) of 137A. The device is rated for a maximum continuous drain current of 137A under specific conditions.
This MOSFET features a PG-TDSON-8 package, suitable for surface-mount designs. It is optimized for superior thermal resistance and is 100% avalanche tested. The component is Pb-free and Halogen-free, compliant with RoHS and IEC61249-2-21 standards.
Fully qualified according to JEDEC for Industrial Applications, the BSC028N06NS is designed for reliability and high efficiency in power conversion systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 60V.
The on-resistance is 2.8 mOhm when Vgs is 10V and Id is 137A.
The maximum continuous drain current is 137A.
The BSC028N06NS is supplied in a PG-TDSON-8 package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.
The REACH status is REACH Unaffected.