BSC028N06NS The Infineon Technologies BSC028N06NS is an N-channel MOSFET with a 60V drain-source voltage and a low on-resistance of 2.8 mOhm. It is packaged in a PG-TDSON-8.
Mfr Part #:

BSC028N06NS

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
The Infineon Technologies BSC028N06NS is an N-channel MOSFET with a 60V drain-source voltage and a low on-resistance of 2.8 mOhm. It is packaged in a PG-TDSON-8.
✓ Total Stock: 103,514 pcs
$ Price Range: $2.40

BSC028N06NS Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
103,514 pcs
103514 pcs On Request 1 On Request On Request 18+17+PBF On Request On Request

BSC028N06NS Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Halogen Free
SVHC Present

BSC028N06NS Description

Short technical summary and product information.

The Infineon Technologies BSC028N06NS is a high-performance N-channel Power MOSFET from the OptiMOS™ family. It is designed for demanding applications such as switched-mode power supplies (SMPS) and synchronous rectification.

 

Key electrical characteristics include a maximum drain-source voltage (Vds) of 60V and a low on-resistance (Rds(on)) of 2.8 mOhm at a gate-source voltage (Vgs) of 10V and a continuous drain current (Id) of 137A. The device is rated for a maximum continuous drain current of 137A under specific conditions.

 

This MOSFET features a PG-TDSON-8 package, suitable for surface-mount designs. It is optimized for superior thermal resistance and is 100% avalanche tested. The component is Pb-free and Halogen-free, compliant with RoHS and IEC61249-2-21 standards.

 

Fully qualified according to JEDEC for Industrial Applications, the BSC028N06NS is designed for reliability and high efficiency in power conversion systems.

BSC028N06NS Quick Information

Product Type: N-channel MOSFET
Canonical Name: Infineon Technologies BSC028N06NS N-channel MOSFET
Subcategory: N-channel

BSC028N06NS Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BSC028N06NS Estimated Pricing

Qty Low High
1+ $2.40 $2.40

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSC028N06NS Features

  • 60V drain-source voltage rating.
  • Low 2.8 mOhm on-resistance.
  • High 137A continuous drain current.
  • PG-TDSON-8 surface-mount package.
  • Pb-free and Halogen-free compliant.

BSC028N06NS Applications

  • Optimized for high performance SMPS.
  • Suitable for synchronous rectification.
  • Designed for industrial applications.
  • Power conversion systems.

BSC028N06NS FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the BSC028N06NS?

The maximum drain-source voltage is 60V.

What is the typical on-resistance of the BSC028N06NS?

The on-resistance is 2.8 mOhm when Vgs is 10V and Id is 137A.

What is the maximum continuous drain current for the BSC028N06NS?

The maximum continuous drain current is 137A.

What package type is the BSC028N06NS MOSFET supplied in?

The BSC028N06NS is supplied in a PG-TDSON-8 package.

Is the BSC028N06NS RoHS compliant?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the BSC028N06NS?

The Moisture Sensitivity Level is 1 Unlimited.

Does the BSC028N06NS meet REACH regulations?

The REACH status is REACH Unaffected.

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