| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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25,000 pcs
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25000 pcs | On Request | 1 | On Request | On Request | 09+PBF | On Request | On Request |
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The Infineon Technologies BSC028N03CSC is a single N-channel MOSFET with a logic level gate. It is designed for surface mount applications and comes in a PG-TDSON-8 package.
Key electrical specifications include a drain-source voltage (Vds) of 30V and a continuous drain current (Id) of 100A at 25°C. The on-resistance (Rds(on)) is a maximum of 2.8 mOhm when Vgs is 10V and Id is 50A. The typical gate charge (Qg) is 35 nC at Vgs=10V, and the typical threshold voltage (Vgs(th)) is 2.5V.
Thermal performance is supported by a typical junction-to-ambient thermal resistance (RthJA) of 40 K/W and a typical junction-to-case thermal resistance (RthJC) of 1.5 K/W (top).
This MOSFET is suitable for applications requiring efficient power switching and control.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) is 30 V.
The continuous drain current (Id) is 100 A at Tj=25°C.
The on-resistance (Rds(on)) is a maximum of 2.8 mOhm.
The typical gate charge (Qg) is 35 nC at Vgs=10V.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
The REACH status is REACH Unaffected.