| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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10,215 pcs
|
10215 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
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The BSC027N03SG is a high-performance N-channel MOSFET manufactured by Infineon Technologies. Designed for power applications, it offers a drain-source breakdown voltage of 30V and a continuous drain current capability of 100A. The MOSFET exhibits a low drain-source on-resistance of 3.9 mOhms, making it efficient for power switching.
This component operates with a gate-source voltage range of ±20V. It is built on silicon technology and features an enhancement mode channel. The operating temperature range spans from -55°C to +150°C, ensuring reliability in various environments. Power dissipation is rated at 2.8W.
The BSC027N03SG is supplied in a TDSON-8 surface-mount package, measuring 5.9mm in length, 5.15mm in width, and 1.27mm in height. Its typical turn-on delay time is 8.8ns, and the typical turn-off delay time is 39ns, with fall and rise times of 6ns and 8ns respectively. The series is part of Infineon's Optimos™ family.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 30V.
The continuous drain current is 100A.
The drain-source on-resistance is 3.9 mOhms.
The operating temperature range is -55°C to +150°C.
The BSC027N03SG is supplied in a TDSON-8 package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.