Mfr Part #:

BSC026NE2LS5ATMA1

Mfr Name: Infineon

The Infineon BSC026NE2LS5ATMA1 is an N-Channel MOSFET with a 25V drain-source breakdown voltage and 82A continuous drain current. It is supplied in a TDSON-8 package.

✓ Total Stock: 498 pcs

$ Price Range: $3.03

BSC026NE2LS5ATMA1 Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Bristol Electronics ✓ Non-Authorised Inventory information	498 pcs On Request	498 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

BSC026NE2LS5ATMA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.

SELECT ALL

Category	New Products
Manufacturer Name	Infineon
Gate Charge	12 nC
Mounting Style	SMD/SMT
Number of Channels	1 Channel
Operating Temperature	-55 C, +150 C
Power Dissipation	29 W
Technology	Si

View Similar Products (0)

BSC026NE2LS5ATMA1 Description

Short technical summary and product information.

The Infineon BSC026NE2LS5ATMA1 is a high-performance N-Channel MOSFET designed for various electronic applications. It features a drain-source breakdown voltage of 25V and a continuous drain current capability of 82A, making it suitable for power switching and amplification tasks.

This MOSFET exhibits a low drain-source on-resistance of 4 mOhms, contributing to efficient power transfer and reduced heat generation. The gate-source threshold voltage is 1.2V, and it operates with a gate-source voltage range of -16V to +16V. The power dissipation is rated at 29W.

Packaged in a surface-mount TDSON-8 configuration, the BSC026NE2LS5ATMA1 is designed for ease of integration into printed circuit boards. Its operating temperature range spans from -55°C to +150°C, ensuring reliability in diverse environmental conditions. The OptiMOS tradename signifies its advanced technology.

This component is constructed using Silicon (Si) technology and operates in enhancement mode, featuring a single channel. Its robust specifications make it a versatile choice for engineers designing power management solutions.

BSC026NE2LS5ATMA1 Quick Information

Product Type: MOSFET

Series: OptiMOS

Canonical Name: Infineon BSC026NE2LS5ATMA1 N-Channel MOSFET

Subcategory: N-Channel

BSC026NE2LS5ATMA1 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

BSC026NE2LS5ATMA1 Estimated Pricing

Qty	Low	High
1+	$3.03	$3.03

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSC026NE2LS5ATMA1 Features

N-Channel Transistor for power switching.
25V Drain-Source Breakdown Voltage.
82A Continuous Drain Current capability.
Low 4 mOhms Drain-Source On-Resistance.
Operates from -55°C to +150°C.

BSC026NE2LS5ATMA1 Applications

Suitable for power switching circuits.
Ideal for power management solutions.
Used in high-current applications.
Efficient for amplification tasks.

BSC026NE2LS5ATMA1 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the continuous drain current of the BSC026NE2LS5ATMA1?

The continuous drain current is 82 A.

What is the drain-source breakdown voltage of this MOSFET?

The drain-source breakdown voltage is 25 V.

What is the drain-source on-resistance of the BSC026NE2LS5ATMA1?

The drain-source on-resistance is 4 mOhms.

What is the gate-source threshold voltage?

The gate-source threshold voltage is 1.2 V.

What is the power dissipation of this device?

The power dissipation is 29 W.

What is the operating temperature range for the BSC026NE2LS5ATMA1?

The operating temperature range is from -55°C to +150°C.

What is the package type for the BSC026NE2LS5ATMA1?

The package type is TDSON-8.