Mfr Part #:

BSC026N04LSATMA1

Available from 2 distributors

Mfr Name: Infineon Technologies

N-Channel 40V MOSFET with ultra-low on-resistance of 2.6mΩ. Supports continuous drain current up to 119A at 25°C.

✓ Total Stock: 21,706 pcs

$ Price Range: $0.33 - $1.43

BSC026N04LSATMA1 Available from 2 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Optech Co.,Limited ✓ Non-Authorised Inventory information	21,020 pcs On Request	21020 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
MW.FEP S.p.A. ✓ Non-Authorised Inventory information	686 pcs On Request	686 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

BSC026N04LSATMA1 Description

Short technical summary and product information.

The BSC026N04LSATMA1 is an N-channel enhancement-mode power MOSFET from Infineon Technologies, part of the OptiMOS family. It features a drain-source voltage rating of 40V and a maximum continuous drain current of 119A at Tc=25°C with VGS=10V. The device achieves an ultra-low on-resistance of 2.6mΩ typical at 50A and 10V, making it highly efficient for power conversion applications.

Key electrical characteristics include a total gate charge of 32nC at 10V, input capacitance of 2300pF at Vds=20V, and 100% avalanche tested with a maximum energy rating of 50mJ. The operating junction temperature range is -55°C to 150°C. The MOSFET is optimized for high-performance switching power supplies and synchronous rectification.

Packaged in the PG-TDSON-8 (8-PowerTDFN) surface-mount package, the device is Pb-free, RoHS3 compliant, and halogen-free per IEC 61249-2-21. It is suitable for space-constrained designs requiring high power density.

BSC026N04LSATMA1 Quick Information

Product Type: N-Channel MOSFET

Series: OptiMOS

Canonical Name: BSC026N04LSATMA1 N-Channel 40V MOSFET

Subcategory: Single MOSFET

BSC026N04LSATMA1 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Lead Free: Yes

BSC026N04LSATMA1 Estimated Pricing

Qty	Low	High
1+	$1.43	$1.43
10+	$0.86	$0.86
100+	$0.58	$0.58
500+	$0.46	$0.46
1,000+	$0.39	$0.39
2,500+	$0.38	$0.38
5,000+	$0.36	$0.36
10,000+	$0.33	$0.33

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSC026N04LSATMA1 Features

Ultra-low on-resistance of 2.6 mΩ.
High continuous drain current up to 119 A.
Optimized for synchronous rectification.
100% avalanche tested.
Pb-free and RoHS compliant.

BSC026N04LSATMA1 Applications

High-performance switching power supplies.
Synchronous rectification circuits.
DC-DC converters.
Motor control applications.
Power management in computing.

BSC026N04LSATMA1 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the drain-source voltage rating of this MOSFET?

40 V.

What is the package type of the BSC026N04LSATMA1?

PG-TDSON-8 (8-PowerTDFN).

What is the operating temperature range?

-55°C to 150°C (junction).

Is this product RoHS compliant?

Yes, RoHS3 compliant per datasheet.

What is the maximum continuous drain current?

119 A at Tc=25°C with VGS=10V.

What is the typical on-resistance (Rds(on))?

2.6 mΩ maximum at 50A and 10V VGS.

What is the total gate charge?

32 nC at VGS=10V.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Infineon Technologies
Current	23 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	32 nC
Halogen Free	Yes
Input Capacitance (Ciss) (Max) @ Vds	2300 pF
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Power Dissipation (Max)	2.5 W
Rds On (Max) @ Id, Vgs	2.6 mΩ
Storage Temperature	-55°C ~ 150°C
Supplier Device Package	PG-TDSON-8-6
Supplier Package	PG-TDSON-8
Tape & Reel	Yes
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20 V
Vgs(th) (Max) @ Id	2 V