| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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105 pcs
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105 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel | |
| Technology |
The Infineon BSC025N03LSGATMA1 is a high-performance N-Channel MOSFET designed for various electronic applications. It features a maximum drain-to-source voltage (Vdss) of 30V and can handle a continuous drain current of 25A at 25°C ambient temperature (Ta) and 100A at 25°C case temperature (Tc).
This MOSFET utilizes Metal Oxide Semiconductor technology and belongs to the OptiMOS™ series. It is housed in a PG-TDSON-8-5 package, designed for surface mounting. The component is specified with a RoHS3 Compliant status, Moisture Sensitivity Level (MSL) of 1, and REACH Unaffected status.
Key electrical characteristics include its N-Channel configuration and its suitability for applications requiring efficient power switching. The surface mount package facilitates integration into compact PCB designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.03 | $3.03 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage is 30 V.
The continuous drain current at 25°C (Ta) is 25A.
The continuous drain current at 25°C (Tc) is 100A.
It is an N-Channel MOSFET.
It is a surface mount PG-TDSON-8-5 package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.