| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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5,000 pcs
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5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drive Voltage (Max Rds On, Min Rds On) | |
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| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The BSC024NE2LSATMA1 is an N-channel enhancement mode power MOSFET from Infineon's OptiMOS family, designed for high-performance DC-DC conversion. It is rated for a maximum drain-source voltage of 25V and can handle a continuous drain current of 110A at case temperature 25°C. The device features a very low maximum on-resistance of 2.4 mOhm at 10V gate drive, enabling high efficiency in power switching applications.
Key electrical characteristics include a typical gate charge of 23 nC and an input capacitance of 1700 pF, which support fast switching. The MOSFET is 100% avalanche tested and offers superior thermal resistance. It is qualified according to JEDEC standards for target applications.
The device is housed in a PG-TDSON-8-5 package (8-PowerTDFN) and is surface mountable. It is Pb-free, RoHS compliant, and halogen-free according to IEC61249-2-21.
The maximum drain-source voltage (Vdss) is 25 V.
The continuous drain current is 110 A at case temperature 25°C (Tc=25°C) and 25 A at ambient temperature 25°C (Ta=25°C).
The maximum on-resistance (Rds(on)) is 2.4 mOhm at a drain current of 30 A and gate-source voltage of 10 V.
The operating junction temperature range is -55°C to 150°C.
It comes in a PG-TDSON-8-5 surface-mount package, also known as 8-PowerTDFN.
Yes, the datasheet states it is Pb-free lead plating and RoHS compliant. It is also halogen-free according to IEC61249-2-21.
The maximum gate threshold voltage (Vgs(th)) is 2 V at a drain current of 250 µA.