BSC022N04LS6ATMA1 N-Channel power MOSFET rated at 40V drain-source voltage and 139A continuous drain current (at Tc=25°C). Features ultra-low on-resistance of 2.2mOhm and is housed in a compact TDSON-8 surface-mount package.
Mfr Part #:

BSC022N04LS6ATMA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel power MOSFET rated at 40V drain-source voltage and 139A continuous drain current (at Tc=25°C). Features ultra-low on-resistance of 2.2mOhm and is housed in a compact TDSON-8 surface-mount package.
✓ Total Stock: 300 pcs
$ Price Range: $0.50 - $1.55

BSC022N04LS6ATMA1 Available from 1 distributor

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BSC022N04LS6ATMA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

BSC022N04LS6ATMA1 Description

Short technical summary and product information.

The BSC022N04LS6ATMA1 is an N-Channel power MOSFET from Infineon Technologies, part of the OptiMOS 6 family designed for high-efficiency synchronous applications. It is rated for a maximum drain-source voltage of 40V and continuous drain current of 139A at Tc=25°C (Vgs=10V). The device achieves an ultra-low on-resistance of just 2.2mOhm maximum at Id=50A, Vgs=10V, minimizing conduction losses. It features a gate threshold voltage of 2.3V maximum at Id=250µA, and total gate charge of 28nC at Vgs=10V, enabling fast switching.

 

The MOSFET is housed in a surface-mount 8-PowerTDFN package (PG-TDSON-8-1), providing excellent thermal performance with a maximum power dissipation of 79W at Tc=25°C. The operating junction temperature range spans -55°C to 175°C. The device is 100% avalanche tested with a single-pulse avalanche energy rating of 85mJ. It is qualified for industrial applications according to JEDEC47/20/22 standards.

 

Typical applications include synchronous rectification in DC-DC converters, low-voltage high-current power management, motor control, and other high-efficiency switching circuits. The device is RoHS compliant and halogen-free according to IEC61249-2-21.

BSC022N04LS6ATMA1 Quick Information

Product Type: MOSFET
Series: OptiMOS 6
Canonical Name: Infineon Technologies BSC022N04LS6ATMA1 N-Channel Power MOSFET, 40V, 139A, TDSON-8 Package
Subcategory: N-Channel MOSFET

BSC022N04LS6ATMA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

BSC022N04LS6ATMA1 Estimated Pricing

Qty Low High
1+ $1.55 $1.55
10+ $0.98 $0.98
100+ $0.65 $0.65
500+ $0.51 $0.51
1,000+ $0.50 $0.50
5,000+ $0.50 $0.50

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSC022N04LS6ATMA1 Features

  • Ultra-low on-resistance of 2.2 mOhm.
  • Rated for 40V drain-source voltage.
  • High continuous drain current of 139A.
  • 100% avalanche tested.
  • RoHS3 compliant and halogen-free.

BSC022N04LS6ATMA1 Applications

  • Ideal for synchronous rectification circuits.
  • Used in DC-DC converters for high efficiency.
  • Suitable for motor control and power management.

BSC022N04LS6ATMA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating voltage of this MOSFET?

The maximum drain-source voltage (Vds) is 40 V.

What is the package type?

The package is 8-PowerTDFN (TDSON-8) with supplier device package PG-TDSON-8-1.

What is the operating temperature range?

The operating junction temperature range is -55°C to 175°C.

What is the RoHS status?

The device is RoHS compliant (Pb-free lead plating) and halogen-free according to IEC61249-2-21.

What is the maximum continuous drain current?

At Tc=25°C, Vgs=10V, the continuous drain current is 139 A. At ambient temperature 25°C, it is 27 A.

What is the on-resistance?

Maximum on-resistance is 2.2 mΩ at Id=50A, Vgs=10V.

What is the gate threshold voltage?

Maximum gate threshold voltage is 2.3 V at Id=250 µA.

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