K4B2G1646Q-BCK
Samsung Electronics
The Samsung Electronics K4B2G1646Q-BCK is a 2Gb DDR3L SDRAM component. It features a 1.35V operating voltage and is housed in a 96-FBGA package.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
29,311 pcs
|
29311 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request | |
|
2,000 pcs
|
2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Storage Temperature |
The Infineon Technologies BSC022N04LS is an N-channel OptiMOSTM Power MOSFET with a 40V drain-source voltage rating. It is optimized for high-performance Switched-Mode Power Supplies (SMPS), such as synchronous rectification.
Key electrical characteristics include a very low on-resistance of 2.2 mΩ at VGS=4.5V. The continuous drain current is rated up to 134A at TC=25°C with VGS=10V, and 111A at TC=25°C with VGS=4.5V. It also features a pulsed drain current of 536A and is 100% avalanche tested.
This MOSFET is housed in a SuperSO8 package, suitable for surface mount applications. It is Pb-free, RoHS compliant, and halogen-free according to IEC61249-2-21 standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
40 V.
134 A at VGS=10 V and case temperature 25°C.
2.2 mΩ maximum at VGS=4.5 V.
PG-TDSON-8 surface mount package.
37 nC (VGS=0V to 10V).
536 A.
69 W.
