Mfr Part #:

BSC022N03SG

N-Channel MOSFET from Infineon Technologies with 30V drain-source voltage, 100A continuous drain current (Tc=25°C), and 2.2mΩ on-resistance at 10V gate drive. Surface mount package PG-TDSON-8.

✓ Total Stock: 36,331 pcs

$ Price Range: $1.15

BSC022N03SG Available from 2 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Optech Co.,Limited ✓ Non-Authorised Inventory information	29,678 pcs On Request	29678 pcs	On Request	1	On Request	On Request	11+	On Request	On Request
Smaxon Electronics ✓ Non-Authorised Inventory information	6,653 pcs On Request	6653 pcs	On Request	1	On Request	On Request	11+	On Request	On Request

BSC022N03SG Description

Short technical summary and product information.

The BSC022N03SG is an N-Channel power MOSFET from Infineon Technologies, part of the OptiMOS 2 family optimized for high-efficiency switching applications. It features a drain-source voltage rating of 30V and a continuous drain current of 50A at case temperature 25°C (as per datasheet) with a pulsed current capability of 200A. The on-resistance is extremely low at 2.2 mΩ maximum at Vgs=10V and Id=50A, enabling minimal conduction losses. The device is logic-level compatible with a gate threshold voltage of 1.6V typical and up to 2V maximum.

The MOSFET exhibits excellent switching performance with typical gate charge of 43 nC at Vgs=10V and fast switching times (turn-on delay 14ns, rise time 13ns, turn-off delay 62ns, fall time 11ns). Input capacitance is 7490 pF maximum at Vds=15V. The device is avalanche rated with a single pulse avalanche energy of 800 mJ, and reverse diode dv/dt rating of 6 kV/µs.

Packaged in the compact PG-TDSON-8 (8-PowerTDFN) surface mount package, the BSC022N03SG offers superior thermal performance with a junction-to-case thermal resistance of 1.2 K/W. It is designed for SMPS, notebook DC/DC converters, and other high-current, high-frequency power conversion circuits.

BSC022N03SG Quick Information

Product Type: MOSFET

Series: OptiMOS

Canonical Name: BSC022N03SG N-Channel MOSFET

Subcategory: Single MOSFET

BSC022N03SG Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

BSC022N03SG Estimated Pricing

Qty	Low	High
5,000+	$1.15	$1.15

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSC022N03SG Features

N-Channel 30V power MOSFET.
Very low on-resistance of 2.2 mΩ.
Optimized for notebook DC/DC converters.
Avalanche rated for robust operation.
Surface mount PG-TDSON-8 package.

BSC022N03SG Applications

Used in SMPS and DC/DC converters.
Ideal for notebook power management.
Suitable for high-current switching applications.
Compatible with logic level gate drives.

BSC022N03SG FAQs

7 frequently asked questions generated from this part’s specifications.

What is the drain-source voltage rating of the BSC022N03SG?

30V.

What is the package type of the BSC022N03SG?

8-PowerTDFN (PG-TDSON-8-1).

What is the operating temperature range?

-55°C to 150°C (junction temperature).

Is the BSC022N03SG RoHS compliant?

RoHS3 compliant (unverified, low confidence).

What is the continuous drain current at case temperature 25°C?

50A (datasheet value).

What is the on-resistance at Vgs=10V?

2.2 mΩ maximum at Id=50A.

What is the typical gate threshold voltage?

1.6V (maximum 2V at Id=110µA).

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Infineon Technologies
Current	28 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	64 nC
Input Capacitance (Ciss) (Max) @ Vds	8290 pF @ 15 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Power Dissipation (Max)	2.8 W
Rds On (Max) @ Id, Vgs	2.2 mΩ
Storage Temperature	-55°C ~ 150°C
Supplier Device Package	PG-TDSON-8-1
Tape & Reel	Yes
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20 V
Vgs(th) (Max) @ Id	2 V