| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,000 pcs
|
6000 pcs | On Request | 1 | On Request | On Request | 08+ | On Request | On Request |
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The BSC022N03S is an N-channel enhancement-mode MOSFET from Infineon's OptiMOS 2 family. It is designed for power switching applications requiring high efficiency and fast switching. Key specifications include a drain-source voltage (Vds) of 30V and a continuous drain current of 50A at case temperature 25°C (28A at ambient temperature 25°C). Pulsed drain current capability is 200A. The device features very low on-resistance: 2.2mΩ maximum at Vgs=10V and 3.3mΩ maximum at Vgs=4.5V, enabling logic-level gate drive. Gate charge total is 58nC maximum, which contributes to reduced switching losses.
The MOSFET is avalanche rated with a single-pulse avalanche energy of 800mJ, and the reverse diode can handle a dv/dt of 6kV/µs. Power dissipation is 104W at case temperature 25°C and 2.8W at ambient temperature 25°C. The device is housed in a compact 8-PowerTDFN surface-mount package, also known as PG-TDSON-8-1, offering excellent thermal performance with junction-to-case thermal resistance of 1.2 K/W. The operating junction temperature range is -55°C to 150°C.
This MOSFET is suitable for switch-mode power supplies (SMPS), notebook DC/DC converters, and other high-efficiency power conversion systems. The low gate charge and low on-resistance make it an excellent choice for applications demanding high power density and thermal efficiency.
| Qty | Low | High |
|---|---|---|
| 5,000+ | $0.89 | $0.89 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
50A at case temperature 25°C, 28A at ambient temperature 25°C.
2.2mΩ max at Vgs=10V, 3.3mΩ max at Vgs=4.5V.
-55°C to 150°C.
8-PowerTDFN (PG-TDSON-8-1) surface mount package.
RoHS3 compliant (unverified).
1.2V to 2V.