| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,420 pcs
|
1420 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Feature | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The BSC021N08NS5ATMA1 is an N-Channel MOSFET from Infineon Technologies, featuring a drain-source voltage of 80V and a continuous drain current of 100A. The device has a maximum on-resistance of 2.1mΩ at Vgs=10V and Id=50A, ensuring low conduction losses. Gate charge is 29nC at 10V, and input capacitance is 8600pF at Vds=40V, enabling efficient switching. The MOSFET is housed in a surface-mount 8-PowerTDFN package (PG-TSON-8-3), suitable for compact designs. It operates over a junction temperature range of -55°C to 175°C, with a maximum power dissipation of 214W. It is RoHS compliant and has a moisture sensitivity level of 1. Typical applications include high-frequency DC-DC converters, synchronous rectification, and motor control.
| Qty | Low | High |
|---|---|---|
| 1+ | $6.21 | $6.21 |
| 10+ | $4.10 | $4.10 |
| 100+ | $2.99 | $2.99 |
| 500+ | $2.68 | $2.68 |
| 1,000+ | $2.60 | $2.60 |
| 2,500+ | $2.44 | $2.44 |
| 5,000+ | $2.43 | $2.43 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 80V.
The continuous drain current (Tc) is 100A.
The device is housed in an 8-PowerTDFN package (PG-TSON-8-3).
The junction temperature range is -55°C to 175°C.
The RoHS status is listed as RoHS3 compliant, but this is unverified.
The maximum on-resistance at Vgs=10V, Id=50A is 2.1mΩ.
The maximum gate threshold voltage at Id=146µA is 3.8V.