BSC020N03MSGATMA1 N-channel 30V power MOSFET from Infineon with a very low on-resistance of 2mOhm, continuous drain current up to 176A, and TDSON-8 surface-mount package.
Mfr Part #:

BSC020N03MSGATMA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-channel 30V power MOSFET from Infineon with a very low on-resistance of 2mOhm, continuous drain current up to 176A, and TDSON-8 surface-mount package.
✓ Total Stock: 6,020 pcs
$ Price Range: $0.84 - $1.97

BSC020N03MSGATMA1 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
6,020 pcs
6020 pcs On Request 1 On Request On Request On Request On Request On Request

BSC020N03MSGATMA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

BSC020N03MSGATMA1 Description

Short technical summary and product information.

The Infineon BSC020N03MSGATMA1 is an N-channel MOSFET from the OptiMOS 3M-Series, designed for high-efficiency power conversion. It features a drain-source voltage of 30V and a maximum continuous drain current of 176A (at Tc=25°C) as per the datasheet, with a very low on-resistance of just 2mOhm at Vgs=10V. The device is optimized for 5V driver applications and delivers excellent gate charge x Rds(on) figure of merit for high-frequency SMPS designs.

 

This MOSFET is 100% avalanche tested, with a single-pulse avalanche energy rating of 200mJ. It supports a wide operating junction temperature range from -55°C to 150°C. The surface-mount TDSON-8 package (PG-TDSON-8-1) enables compact PCB layouts and superior thermal performance.

 

Designed for notebook VGA, point-of-load, and other DC-DC converter applications, the BSC020N03MSGATMA1 is RoHS compliant and halogen-free according to IEC61249-2-21.

BSC020N03MSGATMA1 Quick Information

Product Type: N-Channel MOSFET
Series: BSC020N03MS G
Canonical Name: Infineon Technologies BSC020N03MSGATMA1 N-Channel MOSFET, 30V Drain-Source Voltage, TDSON-8 Package
Subcategory: Single N-Channel Power MOSFET

BSC020N03MSGATMA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Yes

BSC020N03MSGATMA1 Estimated Pricing

Qty Low High
1+ $1.97 $1.97
10+ $1.25 $1.25
100+ $0.84 $0.84

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSC020N03MSGATMA1 Features

  • Very low 2mOhm on-resistance at 10V gate drive.
  • 100% avalanche tested for ruggedness.
  • Optimized for 5V gate drive applications.
  • RoHS compliant and halogen-free design.
  • TDSON-8 package for excellent thermal performance.

BSC020N03MSGATMA1 Applications

  • High-frequency DC-DC converters and SMPS.
  • Notebook and VGA power supply designs.
  • Point-of-load (POL) power modules.
  • Battery management and load switches.

BSC020N03MSGATMA1 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the BSC020N03MSGATMA1?

The maximum drain-source voltage (Vds) is 30 V.

What package does this MOSFET come in?

The BSC020N03MSGATMA1 is offered in an 8-PowerTDFN package (PG-TDSON-8-1) for surface mount.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the BSC020N03MSGATMA1 RoHS compliant?

Yes, it is RoHS compliant with Pb-free plating. It is also halogen-free according to IEC61249-2-21.

What is the typical on-resistance at 4.5V gate drive?

The maximum drain-source on-resistance at Vgs=4.5V is 2.5 mOhm.

Home

Categories