Mfr Part #:

BSC019N06NSATMA1

N-Channel 60V MOSFET from Infineon Technologies, rated for 100A continuous drain current (Ta) and 192A (Tc). Features low on-resistance of 1.95mΩ and is optimized for synchronous rectification.

✓ Total Stock: 11,020 pcs

$ Price Range: $0.65 - $1.90

BSC019N06NSATMA1 Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Optech Co.,Limited ✓ Non-Authorised Inventory information	11,020 pcs On Request	11020 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

BSC019N06NSATMA1 Description

Short technical summary and product information.

The BSC019N06NSATMA1 is an N-channel enhancement mode MOSFET from Infineon's OptiMOS series, designed for high efficiency power conversion. It features a drain-source voltage rating of 60V and a continuous drain current of 100A at ambient temperature (192A at case temperature). The device has a maximum on-resistance of 1.95mΩ at 10V gate drive, enabling low conduction losses.

Key electrical characteristics include a gate threshold voltage of 3.3V maximum, gate charge of 58nC typical, and input capacitance of 5250pF. The MOSFET is avalanche rated at 220mJ single pulse. It operates over a junction temperature range of -55°C to 175°C.

The device is housed in a PG-TDSON-8 FL (8-PowerTDFN) surface mount package, providing excellent thermal performance. It is RoHS compliant and halogen-free, making it suitable for environmentally sensitive designs. The enlarged source interconnection improves solder joint reliability.

BSC019N06NSATMA1 Quick Information

Product Type: MOSFET

Canonical Name: Infineon BSC019N06NSATMA1 N-Channel 60V MOSFET

Subcategory: Single MOSFET

BSC019N06NSATMA1 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 (Unlimited)

REACH Status: REACH Unaffected

Lead Free: No

BSC019N06NSATMA1 Estimated Pricing

Qty	Low	High
1+	$1.90	$1.90
10+	$1.22	$1.22
100+	$0.88	$0.88
500+	$0.78	$0.78
5,000+	$0.65	$0.65

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSC019N06NSATMA1 Features

N-channel 60V MOSFET for synchronous rectification.
Low on-resistance of 1.95mΩ at 10V.
High current rating up to 192A at Tc.
Avalanche rated at 220mJ single pulse.
RoHS compliant and halogen-free design.

BSC019N06NSATMA1 Applications

Optimized for synchronous rectification in power supplies.
Used in high-current DC-DC converter circuits.
Suitable for battery management and motor control.
Ideal for power OR-ing and load switch designs.

BSC019N06NSATMA1 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the package type of this MOSFET?

8-PowerTDFN (PG-TDSON-8 FL).

What is the operating temperature range?

-55°C to 175°C (junction).

Is this MOSFET RoHS compliant?

Yes, RoHS3 compliant and halogen-free according to IEC61249-2-21.

What is the drain-source voltage rating?

60V.

What is the maximum continuous drain current?

100A at 25°C ambient temperature and 192A at 25°C case temperature.

What is the typical gate charge?

58 nC at Vgs=10V.

What is the maximum on-resistance?

1.95 mΩ at Vgs=10V, Id=50A.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Infineon Technologies
Current	100 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	77 nC @ 10 V
Halogen Free	Yes
Input Capacitance (Ciss) (Max) @ Vds	5250 pF
Mounting Type	Surface Mount
Operating Temperature	-55°C to 175°C
Power Dissipation (Max)	136 W
Rds On (Max) @ Id, Vgs	1.95 mΩ
SVHC Present	Not Present
Storage Temperature	-55°C ~ 175°C
Supplier Device Package	PG-TDSON-8 FL
Tape & Reel	Yes
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	3.3 V