Mfr Part #:

BSC019N04NSGATMA1

N-Channel MOSFET, 40V drain-source voltage, 204A continuous drain current (Tc=25°C), 1.9mOhm on-resistance, surface mount PG-TDSON-8 package.

✓ Total Stock: 27,000 pcs

$ Price Range: $0.38 - $1.66

BSC019N04NSGATMA1 Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Optech Co.,Limited ✓ Non-Authorised Inventory information	27,000 pcs On Request	27000 pcs	On Request	1	On Request	On Request	1650+	On Request	On Request

BSC019N04NSGATMA1 Description

Short technical summary and product information.

The BSC019N04NSGATMA1 is an N-channel enhancement-mode MOSFET from Infineon's OptiMOS 3 series, designed for high-efficiency power conversion. It features a maximum drain-to-source voltage of 40V and a continuous drain current of 204A at Tc=25°C (VGS=10V). The ultra-low on-resistance of 1.9mOhm (max) at 50A and 10V gate drive minimizes conduction losses, making it suitable for high-current switching applications. The device is optimized for DC/DC converters and switched-mode power supplies (SMPS), offering fast switching with excellent gate charge (108nC) and low input capacitance (8800pF). It is 100% avalanche tested and supports a junction temperature range of -55°C to 150°C. The MOSFET is housed in a PG-TDSON-8 (SuperSO8) surface-mount package, providing superior thermal resistance (50 K/W junction-to-ambient). It is Pb-free, RoHS3 compliant, and halogen-free according to IEC61249-2-21.

BSC019N04NSGATMA1 Quick Information

Product Type: N-Channel MOSFET

Canonical Name: Infineon BSC019N04NSGATMA1 N-Channel MOSFET, 40V, 204A, 1.9mOhm, PG-TDSON-8

Subcategory: Single MOSFET

BSC019N04NSGATMA1 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

BSC019N04NSGATMA1 Estimated Pricing

Qty	Low	High
1+	$1.66	$1.66
10+	$1.05	$1.05
50+	$0.79	$0.79
100+	$0.70	$0.70
500+	$0.55	$0.55
5,000+	$0.42	$0.42
15,000+	$0.38	$0.38

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSC019N04NSGATMA1 Features

40V maximum drain-source voltage.
204A continuous drain current at Tc=25°C.
Ultra-low 1.9mOhm on-resistance.
Surface mount PG-TDSON-8 package.
100% avalanche tested.

BSC019N04NSGATMA1 Applications

Used in DC/DC converters for SMPS.
Suitable for high-current switching applications.
Ideal for power management in computing.
Applicable in motor control circuits.

BSC019N04NSGATMA1 FAQs

4 frequently asked questions generated from this part’s specifications.

What is the maximum drain-to-source voltage of the BSC019N04NSGATMA1?

The maximum drain-to-source voltage is 40V.

What is the package type of this MOSFET?

It comes in a PG-TDSON-8 (SuperSO8) surface mount package.

What is the operating temperature range of the BSC019N04NSGATMA1?

The junction temperature range is -55°C to 150°C.

Is the BSC019N04NSGATMA1 RoHS compliant?

Yes, it is RoHS3 compliant and halogen-free according to IEC61249-2-21.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Infineon Technologies
Current	30 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10V (Max Rds On, Min Rds On)
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	108 nC
Halogen Free	Halogen-free according to IEC61249-2-21
Input Capacitance (Ciss) (Max) @ Vds	8800 pF
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	PG-TDSON-8 (SuperSO8)
Power Dissipation (Max)	2.5 W
Rds On (Max) @ Id, Vgs	1.9 mOhm
Storage Temperature	-55°C ~ 150°C
Supplier Device Package	PG-TDSON-8-1
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	4 V