| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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96,000 pcs
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96000 pcs | On Request | 1 | On Request | On Request | 17+PBF | On Request | On Request |
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The Infineon Technologies BSC017N04NSG is a high-performance N-Channel Power MOSFET. It is designed for applications requiring robust power handling capabilities.
Key electrical specifications include a maximum drain-source voltage of 40V and a maximum continuous drain current of 120A. The typical drain-source on-resistance (RDS(ON)) is 1.7mΩ at a gate-source voltage of 10V, with a specified RDS(ON) of 2mΩ at 10V. The device operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 139W.
This MOSFET is housed in a surface mount package, making it suitable for integration into compact electronic designs. The typical rise time is 5.8ns and the fall time is 6.8ns, indicating fast switching characteristics.
It is suitable for power switching applications, motor control, and power management circuits where efficiency and reliability are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
40V.
1.7 mΩ at Vgs=10V.
120A.
-55°C to 150°C.
Surface Mount with 8 terminals.
6.6 nF.
139W.