| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
238 pcs
|
238 pcs | On Request | 1 | On Request | On Request | 08+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| SVHC Present |
The Infineon Technologies BSC017N04NS is a high-performance N-channel MOSFET from the OptiMOS™3 family, optimized for switch-mode power supplies (SMPS) and DC/DC converters. It features a 40V drain-source breakdown voltage and a very low on-resistance, with a maximum of 1.7 mΩ at 10V gate-source voltage and 50A drain current. This device is designed for fast switching applications, offering excellent gate charge characteristics and superior thermal resistance.
The MOSFET operates with a gate source voltage range of ±20V and has a continuous drain current rating of 100A at 25°C case temperature. It is 100% avalanche tested and comes in a PG-TDSON-8 package suitable for surface mounting.
Key electrical characteristics include a gate threshold voltage between 2V and 4V, and a transconductance of up to 120S. Dynamic characteristics such as input capacitance, output capacitance, and switching times are also specified, making it suitable for demanding power applications. The device is Pb-free and Halogen-free, compliant with RoHS standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source breakdown voltage is 40V.
The typical gate threshold voltage is 3V, with a range of 2V to 4V.
The maximum drain-source on-state resistance is 1.7 mΩ at VGS=10V and ID=50A.
The continuous drain current is rated at 100A at TC=25°C and 100°C.
The package type is PG-TDSON-8.
Yes, this product is RoHS3 Compliant.
The Moisture Sensitivity Level is 1.