BSC016N06NS The Infineon BSC016N06NS is an N-channel MOSFET with a 60V breakdown voltage and a low on-resistance of 1.6 mOhm. It is suitable for synchronous rectification applications.
Mfr Part #:

BSC016N06NS

Available from 4 distributors
Mfr Name: Infineon
Infineon
The Infineon BSC016N06NS is an N-channel MOSFET with a 60V breakdown voltage and a low on-resistance of 1.6 mOhm. It is suitable for synchronous rectification applications.
✓ Total Stock: 25,442 pcs
$ Price Range: $0.99

BSC016N06NS Available from 4 distributors

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15,000 pcs
15000 pcs On Request 1 On Request On Request 21+ On Request On Request
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7,853 pcs
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1589 pcs On Request 1 On Request On Request On Request On Request On Request
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BSC016N06NS Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Halogen Free
Power Dissipation

BSC016N06NS Description

Short technical summary and product information.

The Infineon BSC016N06NS is a high-performance N-channel Power MOSFET from the OptiMOS™ family, designed for demanding applications requiring efficient power conversion. It features a breakdown voltage of 60V and a remarkably low on-resistance of 1.6 mΩ at a gate-source voltage of 10V and a drain current of 50A. This MOSFET is optimized for synchronous rectification, offering superior thermal resistance and 100% avalanche tested for reliability.

 

With a continuous drain current capability of up to 234A at 25°C, the BSC016N06NS is well-suited for high-power applications. It is rated for operation up to 175°C and comes in a PG-TDSON-8 package. The component is Pb-free and Halogen-free, complying with RoHS and IEC61249-2-21 standards, ensuring environmental responsibility in its design and application.

 

Key electrical characteristics include a gate charge of 81 nC, with 71 nC specified for the 0V to 10V range. The device is fully qualified according to JEDEC standards for industrial applications, providing a robust solution for power management needs.

BSC016N06NS Quick Information

Product Type: MOSFET
Series: OptiMOS™ Power-MOSFET
Canonical Name: BSC016N06NS N-channel MOSFET
Subcategory: N-channel

BSC016N06NS Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-free lead plating

BSC016N06NS Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSC016N06NS Features

  • 60V drain-source breakdown voltage.
  • Low 1.6 mOhm on-resistance.
  • High 234A continuous drain current.
  • Optimized for synchronous rectification.
  • Pb-free and Halogen-free compliance.

BSC016N06NS Applications

  • Suitable for synchronous rectification.
  • Designed for industrial applications.
  • Power conversion circuits.
  • High-efficiency power management.

BSC016N06NS FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the BSC016N06NS?

The maximum drain-source voltage is 60V.

What is the on-resistance of the BSC016N06NS?

The on-resistance is a maximum of 1.6 mΩ at Vgs = 10 V, Id = 50 A.

What is the continuous drain current for the BSC016N06NS?

The continuous drain current is up to 234A at 25°C and 164A at 100°C.

What package type is the BSC016N06NS MOSFET in?

The BSC016N06NS is supplied in a PG-TDSON-8 package.

Is the BSC016N06NS RoHS compliant?

Yes, the BSC016N06NS is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the BSC016N06NS?

The Moisture Sensitivity Level (MSL) is 1 Unlimited.

Is the BSC016N06NS Halogen Free?

Yes, the BSC016N06NS is Halogen-free according to IEC61249-2-21.

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